The nitrogen-related shallow donor in ZnSe: N epitaxial layers

E. Tournié, Christian Morhain, G. Neu, J. P. Faurie

Research output: Contribution to journalArticle

Abstract

Nitrogen-doped and nitrogen-implanted ZnSe epitaxial layers grown by molecular-beam epitaxy are studied through photoluminescence (PL), selective PL and PL-excitation spectroscopies. The results are compared with those obtained from samples implanted or doped with other impurities. Only N-containing samples give rise to transitions corresponding to a dominant shallow donor with a binding energy of 29.1 meV which is not a residual impurity in ZnSe. We demonstrate that this shallow donor is associated with nitrogen. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)520-524
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998

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photoluminescence
nitrogen
impurities
molecular beam epitaxy
binding energy
spectroscopy
excitation

Keywords

  • Compensation
  • Doping
  • Optical spectroscopy
  • ZnSe

Cite this

Tournié, E., Morhain, C., Neu, G., & Faurie, J. P. (1998). The nitrogen-related shallow donor in ZnSe: N epitaxial layers. Journal of Crystal Growth, 184-185, 520-524.
Tournié, E. ; Morhain, Christian ; Neu, G. ; Faurie, J. P. / The nitrogen-related shallow donor in ZnSe : N epitaxial layers. In: Journal of Crystal Growth. 1998 ; Vol. 184-185. pp. 520-524.
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Tournié, E, Morhain, C, Neu, G & Faurie, JP 1998, 'The nitrogen-related shallow donor in ZnSe: N epitaxial layers', Journal of Crystal Growth, vol. 184-185, pp. 520-524.

The nitrogen-related shallow donor in ZnSe : N epitaxial layers. / Tournié, E.; Morhain, Christian; Neu, G.; Faurie, J. P.

In: Journal of Crystal Growth, Vol. 184-185, 1998, p. 520-524.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The nitrogen-related shallow donor in ZnSe

T2 - N epitaxial layers

AU - Tournié, E.

AU - Morhain, Christian

AU - Neu, G.

AU - Faurie, J. P.

PY - 1998

Y1 - 1998

N2 - Nitrogen-doped and nitrogen-implanted ZnSe epitaxial layers grown by molecular-beam epitaxy are studied through photoluminescence (PL), selective PL and PL-excitation spectroscopies. The results are compared with those obtained from samples implanted or doped with other impurities. Only N-containing samples give rise to transitions corresponding to a dominant shallow donor with a binding energy of 29.1 meV which is not a residual impurity in ZnSe. We demonstrate that this shallow donor is associated with nitrogen. © 1998 Elsevier Science B.V. All rights reserved.

AB - Nitrogen-doped and nitrogen-implanted ZnSe epitaxial layers grown by molecular-beam epitaxy are studied through photoluminescence (PL), selective PL and PL-excitation spectroscopies. The results are compared with those obtained from samples implanted or doped with other impurities. Only N-containing samples give rise to transitions corresponding to a dominant shallow donor with a binding energy of 29.1 meV which is not a residual impurity in ZnSe. We demonstrate that this shallow donor is associated with nitrogen. © 1998 Elsevier Science B.V. All rights reserved.

KW - Compensation

KW - Doping

KW - Optical spectroscopy

KW - ZnSe

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M3 - Article

VL - 184-185

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Tournié E, Morhain C, Neu G, Faurie JP. The nitrogen-related shallow donor in ZnSe: N epitaxial layers. Journal of Crystal Growth. 1998;184-185:520-524.