Nitrogen-doped and nitrogen-implanted ZnSe epitaxial layers grown by molecular-beam epitaxy are studied through photoluminescence (PL), selective PL and PL-excitation spectroscopies. The results are compared with those obtained from samples implanted or doped with other impurities. Only N-containing samples give rise to transitions corresponding to a dominant shallow donor with a binding energy of 29.1 meV which is not a residual impurity in ZnSe. We demonstrate that this shallow donor is associated with nitrogen. © 1998 Elsevier Science B.V. All rights reserved.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1998|
- Optical spectroscopy