The nitrogen-related shallow donor in ZnSe: N epitaxial layers

E. Tournié, Christian Morhain, G. Neu, J. P. Faurie

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Nitrogen-doped and nitrogen-implanted ZnSe epitaxial layers grown by molecular-beam epitaxy are studied through photoluminescence (PL), selective PL and PL-excitation spectroscopies. The results are compared with those obtained from samples implanted or doped with other impurities. Only N-containing samples give rise to transitions corresponding to a dominant shallow donor with a binding energy of 29.1 meV which is not a residual impurity in ZnSe. We demonstrate that this shallow donor is associated with nitrogen. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)520-524
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 1998


  • Compensation
  • Doping
  • Optical spectroscopy
  • ZnSe


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