The nitrogen-related shallow donor in ZnSe: N epitaxial layers

E. Tournié, Christian Morhain, G. Neu, J. P. Faurie

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Nitrogen-doped and nitrogen-implanted ZnSe epitaxial layers grown by molecular-beam epitaxy are studied through photoluminescence (PL), selective PL and PL-excitation spectroscopies. The results are compared with those obtained from samples implanted or doped with other impurities. Only N-containing samples give rise to transitions corresponding to a dominant shallow donor with a binding energy of 29.1 meV which is not a residual impurity in ZnSe. We demonstrate that this shallow donor is associated with nitrogen. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)520-524
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998

Keywords

  • Compensation
  • Doping
  • Optical spectroscopy
  • ZnSe

Fingerprint Dive into the research topics of 'The nitrogen-related shallow donor in ZnSe: N epitaxial layers'. Together they form a unique fingerprint.

  • Cite this

    Tournié, E., Morhain, C., Neu, G., & Faurie, J. P. (1998). The nitrogen-related shallow donor in ZnSe: N epitaxial layers. Journal of Crystal Growth, 184-185, 520-524.