The interfacial layer in MIS amorphous silicon solar cells

J McGill; J. I B Wilson; S. Kinmond

doi:10.1063/1.325651

The interfacial layer in MIS amorphous silicon solar cells

J McGill, J. I B Wilson, S. Kinmond

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

When an insulating layer of TiO_x is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open-circuit voltage and the short-circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space-charge region.

Original language	English
Pages (from-to)	548-550
Number of pages	3
Journal	Journal of Applied Physics
Volume	50
Issue number	1
DOIs	https://doi.org/10.1063/1.325651
Publication status	Published - 1979

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title = "The interfacial layer in MIS amorphous silicon solar cells",

abstract = "When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open-circuit voltage and the short-circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space-charge region.",

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AB - When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open-circuit voltage and the short-circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space-charge region.

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The interfacial layer in MIS amorphous silicon solar cells

Abstract

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