The interfacial layer in MIS amorphous silicon solar cells

J McGill, J. I B Wilson, S. Kinmond

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open-circuit voltage and the short-circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space-charge region.

Original languageEnglish
Pages (from-to)548-550
Number of pages3
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 1979


Dive into the research topics of 'The interfacial layer in MIS amorphous silicon solar cells'. Together they form a unique fingerprint.

Cite this