The interfacial layer in MIS amorphous silicon solar cells

J McGill, J. I B Wilson, S. Kinmond

Research output: Contribution to journalArticle

Abstract

When an insulating layer of TiOx is added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open-circuit voltage and the short-circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space-charge region.

Original languageEnglish
Pages (from-to)548-550
Number of pages3
JournalJournal of Applied Physics
Volume50
Issue number1
DOIs
Publication statusPublished - 1979

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