The implementation of temperature control to an inductive-coil photoconductance instrument for the range of 0-230°C

B. B. Paudyal; K. R. McIntosh; D. H. Macdonald; Bryce Richards; R. A. Sinton

doi:10.1002/pip.839

The implementation of temperature control to an inductive-coil photoconductance instrument for the range of 0-230°C

B. B. Paudyal, K. R. McIntosh, D. H. Macdonald, Bryce Richards, R. A. Sinton

Research output: Contribution to journal › Article

Abstract

A new device setup for temperature and injection-dependent lifetime spectroscopy (TIDLS) is described. It comprises two off-the-shelf components: a heating and cooling stage (HCS) from INSTEC and an inductive-coil photoconductance (PC) instrument (WCT-100) from Sinton Consulting Inc. The HCS was fitted to the WCT-100 in a manner that circumscribes the inductive coil (the sensor) of the RF bridge circuit and controls the temperature of the wafer effectively. This setup has the advantage of requiring minor modifications to industry standard instruments while attaining a large temperature range. As experimental verification, injection-dependent lifetimes were measured over a temperature range, 0-230°C, in three iron-implanted silicon wafers. The measured lifetimes are consistent with the Shockley-Read-Hall equation using the impurity concentration calculated from the implant dose and the energy level and capture cross-sections of interstitial iron from the literature. Copyright © 2008 John Wiley & Sons, Ltd.

Original language	English
Pages (from-to)	609-613
Number of pages	5
Journal	Progress in Photovoltaics: Research and Applications
Volume	16
Issue number	7
DOIs	https://doi.org/10.1002/pip.839
Publication status	Published - Nov 2008

Keywords

Contactless
Lifetime
Photoconductance
TIDLS

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10.1002/pip.839

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Paudyal, B. B., McIntosh, K. R., Macdonald, D. H., Richards, B., & Sinton, R. A. (2008). The implementation of temperature control to an inductive-coil photoconductance instrument for the range of 0-230°C. Progress in Photovoltaics: Research and Applications, 16(7), 609-613. https://doi.org/10.1002/pip.839

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title = "The implementation of temperature control to an inductive-coil photoconductance instrument for the range of 0-230°C",

abstract = "A new device setup for temperature and injection-dependent lifetime spectroscopy (TIDLS) is described. It comprises two off-the-shelf components: a heating and cooling stage (HCS) from INSTEC and an inductive-coil photoconductance (PC) instrument (WCT-100) from Sinton Consulting Inc. The HCS was fitted to the WCT-100 in a manner that circumscribes the inductive coil (the sensor) of the RF bridge circuit and controls the temperature of the wafer effectively. This setup has the advantage of requiring minor modifications to industry standard instruments while attaining a large temperature range. As experimental verification, injection-dependent lifetimes were measured over a temperature range, 0-230°C, in three iron-implanted silicon wafers. The measured lifetimes are consistent with the Shockley-Read-Hall equation using the impurity concentration calculated from the implant dose and the energy level and capture cross-sections of interstitial iron from the literature. Copyright {\textcopyright} 2008 John Wiley & Sons, Ltd.",

keywords = "Contactless, Lifetime, Photoconductance, TIDLS",

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AU - McIntosh, K. R.

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AU - Richards, Bryce

AU - Sinton, R. A.

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N2 - A new device setup for temperature and injection-dependent lifetime spectroscopy (TIDLS) is described. It comprises two off-the-shelf components: a heating and cooling stage (HCS) from INSTEC and an inductive-coil photoconductance (PC) instrument (WCT-100) from Sinton Consulting Inc. The HCS was fitted to the WCT-100 in a manner that circumscribes the inductive coil (the sensor) of the RF bridge circuit and controls the temperature of the wafer effectively. This setup has the advantage of requiring minor modifications to industry standard instruments while attaining a large temperature range. As experimental verification, injection-dependent lifetimes were measured over a temperature range, 0-230°C, in three iron-implanted silicon wafers. The measured lifetimes are consistent with the Shockley-Read-Hall equation using the impurity concentration calculated from the implant dose and the energy level and capture cross-sections of interstitial iron from the literature. Copyright © 2008 John Wiley & Sons, Ltd.

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