The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors

M. Akmal; J. Lees; Souheil Ben Smida; S. Woodington; J. Benedikt; K. A. Morris; M. A. Beach; Joe P. McGeehan; Paul J. Tasker

doi:10.1109/INMMIC.2010.5480111

The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors

M. Akmal, J. Lees, Souheil Ben Smida, S. Woodington, J. Benedikt, K. A. Morris, M. A. Beach, Joe P. McGeehan, Paul J. Tasker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

18 Citations (Scopus)

Abstract

The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.

Original language	English
Title of host publication	2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits
Publisher	IEEE
Number of pages	4
ISBN (Electronic)	978-1-4244-7412-7
ISBN (Print)	9781424474103
DOIs	https://doi.org/10.1109/INMMIC.2010.5480111
Publication status	Published - 7 Jun 2010

Keywords

envelope domain
hysteresis
GaN
IF active load pull
inter-modulation
memory effects

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10.1109/INMMIC.2010.5480111

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Akmal, M., Lees, J., Ben Smida, S., Woodington, S., Benedikt, J., Morris, K. A., Beach, M. A., McGeehan, J. P., & Tasker, P. J. (2010). The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors. In 2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits IEEE. https://doi.org/10.1109/INMMIC.2010.5480111

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title = "The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors",

abstract = "The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.",

keywords = "envelope domain, hysteresis, GaN, IF active load pull, inter-modulation, memory effects",

author = "M. Akmal and J. Lees and {Ben Smida}, Souheil and S. Woodington and J. Benedikt and Morris, {K. A.} and Beach, {M. A.} and McGeehan, {Joe P.} and Tasker, {Paul J.}",

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AU - Akmal, M.

AU - Lees, J.

AU - Ben Smida, Souheil

AU - Woodington, S.

AU - Benedikt, J.

AU - Morris, K. A.

AU - Beach, M. A.

AU - McGeehan, Joe P.

AU - Tasker, Paul J.

PY - 2010/6/7

Y1 - 2010/6/7

N2 - The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.

AB - The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.

KW - envelope domain

KW - hysteresis

KW - GaN

KW - IF active load pull

KW - inter-modulation

KW - memory effects

U2 - 10.1109/INMMIC.2010.5480111

DO - 10.1109/INMMIC.2010.5480111

M3 - Conference contribution

SN - 9781424474103

BT - 2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits

PB - IEEE

ER -

The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors

Abstract

Keywords

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