The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors

R. A. Stradling; S. J. Chung; C. M. Ciesla; C. J M Langerak; Y. B. Li; T. A. Malik; B. N. Murdin; A. G. Norman; C. C. Phillips; C. R. Pidgeon; M. J. Pullin; P. J P Tang; W. T. Yuen

The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors

R. A. Stradling
, S. J. Chung
, C. M. Ciesla
, C. J M Langerak
, Y. B. Li
, T. A. Malik
, B. N. Murdin
, A. G. Norman
, C. C. Phillips
, C. R. Pidgeon
, M. J. Pullin
, P. J P Tang
, W. T. Yuen

School of Engineering & Physical Sciences

Research output: Contribution to journal › Literature review › peer-review

1 Citation (Scopus)

Abstract

The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs_1-xSb_x/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs_1-xSb_x/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.

Original language	English
Pages (from-to)	260-265
Number of pages	6
Journal	Materials Science and Engineering: B
Volume	44
Issue number	1-3
Publication status	Published - Feb 1997

Keywords

Quantum wells
Semiconductors
Superlattices

Cite this

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title = "The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors",

abstract = "The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. {\textcopyright} 1997 Published by Elsevier Science S.A.",

keywords = "Quantum wells, Semiconductors, Superlattices",

author = "Stradling, \{R. A.\} and Chung, \{S. J.\} and Ciesla, \{C. M.\} and Langerak, \{C. J M\} and Li, \{Y. B.\} and Malik, \{T. A.\} and Murdin, \{B. N.\} and Norman, \{A. G.\} and Phillips, \{C. C.\} and Pidgeon, \{C. R.\} and Pullin, \{M. J.\} and Tang, \{P. J P\} and Yuen, \{W. T.\}",

year = "1997",

month = feb,

language = "English",

volume = "44",

pages = "260--265",

journal = "Materials Science and Engineering: B",

publisher = "Elsevier Ltd",

number = "1-3",

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TY - JOUR

T1 - The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors

AU - Stradling, R. A.

AU - Chung, S. J.

AU - Ciesla, C. M.

AU - Langerak, C. J M

AU - Li, Y. B.

AU - Malik, T. A.

AU - Murdin, B. N.

AU - Norman, A. G.

AU - Phillips, C. C.

AU - Pidgeon, C. R.

AU - Pullin, M. J.

AU - Tang, P. J P

AU - Yuen, W. T.

PY - 1997/2

Y1 - 1997/2

N2 - The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.

AB - The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.

KW - Quantum wells

KW - Semiconductors

KW - Superlattices

M3 - Literature review

VL - 44

SP - 260

EP - 265

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors

Abstract

Keywords

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