The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors

R. A. Stradling, S. J. Chung, C. M. Ciesla, C. J M Langerak, Y. B. Li, T. A. Malik, B. N. Murdin, A. G. Norman, C. C. Phillips, C. R. Pidgeon, M. J. Pullin, P. J P Tang, W. T. Yuen

Research output: Contribution to journalLiterature review

1 Citation (Scopus)

Abstract

The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.

Original languageEnglish
Pages (from-to)260-265
Number of pages6
JournalMaterials Science and Engineering: B
Volume44
Issue number1-3
Publication statusPublished - Feb 1997

Keywords

  • Quantum wells
  • Semiconductors
  • Superlattices

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