The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.
|Number of pages||6|
|Journal||Materials Science and Engineering: B|
|Publication status||Published - Feb 1997|
- Quantum wells