The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors

R. A. Stradling, S. J. Chung, C. M. Ciesla, C. J M Langerak, Y. B. Li, T. A. Malik, B. N. Murdin, A. G. Norman, C. C. Phillips, C. R. Pidgeon, M. J. Pullin, P. J P Tang, W. T. Yuen

Research output: Contribution to journalLiterature review

Abstract

The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.

Original languageEnglish
Pages (from-to)260-265
Number of pages6
JournalMaterials Science and Engineering: B
Volume44
Issue number1-3
Publication statusPublished - Feb 1997

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superlattices
quantum wells
evaluation
free electron lasers
pumps
life (durability)
probes

Keywords

  • Quantum wells
  • Semiconductors
  • Superlattices

Cite this

Stradling, R. A., Chung, S. J., Ciesla, C. M., Langerak, C. J. M., Li, Y. B., Malik, T. A., ... Yuen, W. T. (1997). The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors. Materials Science and Engineering: B, 44(1-3), 260-265.
Stradling, R. A. ; Chung, S. J. ; Ciesla, C. M. ; Langerak, C. J M ; Li, Y. B. ; Malik, T. A. ; Murdin, B. N. ; Norman, A. G. ; Phillips, C. C. ; Pidgeon, C. R. ; Pullin, M. J. ; Tang, P. J P ; Yuen, W. T. / The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors. In: Materials Science and Engineering: B. 1997 ; Vol. 44, No. 1-3. pp. 260-265.
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abstract = "The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. {\circledC} 1997 Published by Elsevier Science S.A.",
keywords = "Quantum wells, Semiconductors, Superlattices",
author = "Stradling, {R. A.} and Chung, {S. J.} and Ciesla, {C. M.} and Langerak, {C. J M} and Li, {Y. B.} and Malik, {T. A.} and Murdin, {B. N.} and Norman, {A. G.} and Phillips, {C. C.} and Pidgeon, {C. R.} and Pullin, {M. J.} and Tang, {P. J P} and Yuen, {W. T.}",
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Stradling, RA, Chung, SJ, Ciesla, CM, Langerak, CJM, Li, YB, Malik, TA, Murdin, BN, Norman, AG, Phillips, CC, Pidgeon, CR, Pullin, MJ, Tang, PJP & Yuen, WT 1997, 'The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors', Materials Science and Engineering: B, vol. 44, no. 1-3, pp. 260-265.

The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors. / Stradling, R. A.; Chung, S. J.; Ciesla, C. M.; Langerak, C. J M; Li, Y. B.; Malik, T. A.; Murdin, B. N.; Norman, A. G.; Phillips, C. C.; Pidgeon, C. R.; Pullin, M. J.; Tang, P. J P; Yuen, W. T.

In: Materials Science and Engineering: B, Vol. 44, No. 1-3, 02.1997, p. 260-265.

Research output: Contribution to journalLiterature review

TY - JOUR

T1 - The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors

AU - Stradling, R. A.

AU - Chung, S. J.

AU - Ciesla, C. M.

AU - Langerak, C. J M

AU - Li, Y. B.

AU - Malik, T. A.

AU - Murdin, B. N.

AU - Norman, A. G.

AU - Phillips, C. C.

AU - Pidgeon, C. R.

AU - Pullin, M. J.

AU - Tang, P. J P

AU - Yuen, W. T.

PY - 1997/2

Y1 - 1997/2

N2 - The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.

AB - The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1-xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1-xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser. © 1997 Published by Elsevier Science S.A.

KW - Quantum wells

KW - Semiconductors

KW - Superlattices

M3 - Literature review

VL - 44

SP - 260

EP - 265

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

SN - 0921-5107

IS - 1-3

ER -

Stradling RA, Chung SJ, Ciesla CM, Langerak CJM, Li YB, Malik TA et al. The evaluation and control of quantum wells and superlattices of III-V narrow gap semiconductors. Materials Science and Engineering: B. 1997 Feb;44(1-3):260-265.