The effects of in situ annealing on CdSe quantum dots grown by ALE

J. K. Morrod, T. C M Graham, R. J. Warburton, K. A. Prior

Research output: Contribution to journalArticle

Abstract

The effect of increasing annealing times on the emission energies and dot densities of ZnSe/CdSe quantum dots has been studied. Ensemble PL carried out at 77 K demonstrates the energy shift of the main peak attributed to fractional monolayer islands, which is due to annealing. µPL conducted at 4 K was then used to study the increased spectral separation of the emission energies from SK dots. Finally, ex-situ AFM measurements of two samples, showed a reduction in the Stranski-Krastanow dot density of approximately one order of magnitude due to annealing. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,.

Original languageEnglish
Pages (from-to)908-911
Number of pages4
JournalPhysica Status Solidi C - Current Topics in Solid State Physics
Volume3
Issue number4
DOIs
Publication statusPublished - 2006
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 12 Sep 200516 Sep 2005

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