The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents

Y. M. Hassan, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalSolid State Communications
Volume49
Issue number8
Publication statusPublished - Feb 1984

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