Abstract
The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.
Original language | English |
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Pages (from-to) | 771-774 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 49 |
Issue number | 8 |
Publication status | Published - Feb 1984 |