Abstract
The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.
| Original language | English |
|---|---|
| Pages (from-to) | 771-774 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 49 |
| Issue number | 8 |
| Publication status | Published - Feb 1984 |
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Hassan, Y. M., & Wilson, J. I. B. (1984). The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents. Solid State Communications, 49(8), 771-774.