The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents

Y. M. Hassan; J. I B Wilson

The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents

Y. M. Hassan, J. I B Wilson

Research output: Contribution to journal › Article › peer-review

Abstract

The large variation in the characteristic temperature (T_t) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n⁺-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence T_t, will then depend on previous heating and illumination history. © 1984.

Original language	English
Pages (from-to)	771-774
Number of pages	4
Journal	Solid State Communications
Volume	49
Issue number	8
Publication status	Published - Feb 1984

Access to Document

Link to publication in Scopus

Fingerprint Dive into the research topics of 'The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents'. Together they form a unique fingerprint.

Cite this

@article{e597e69fb64c499b85ad4a1658eda5a6,

title = "The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents",

abstract = "The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. {\textcopyright} 1984.",

author = "Hassan, {Y. M.} and Wilson, {J. I B}",

year = "1984",

month = feb,

language = "English",

volume = "49",

pages = "771--774",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "8",

}

TY - JOUR

T1 - The effect of dopant contamination in undoped layers of a-Si

T2 - H on space charge limited currents

AU - Hassan, Y. M.

AU - Wilson, J. I B

PY - 1984/2

Y1 - 1984/2

N2 - The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.

AB - The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.

UR - http://www.scopus.com/inward/record.url?scp=0021375540&partnerID=8YFLogxK

M3 - Article

VL - 49

SP - 771

EP - 774

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 8

ER -