The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents

Y. M. Hassan, J. I B Wilson

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalSolid State Communications
Volume49
Issue number8
Publication statusPublished - Feb 1984

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