The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.
|Number of pages||4|
|Journal||Solid State Communications|
|Publication status||Published - Feb 1984|