The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents

Y. M. Hassan; J. I B Wilson

The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents

Y. M. Hassan, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The large variation in the characteristic temperature (T_t) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n⁺-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence T_t, will then depend on previous heating and illumination history. © 1984.

Original language	English
Pages (from-to)	771-774
Number of pages	4
Journal	Solid State Communications
Volume	49
Issue number	8
Publication status	Published - Feb 1984

Cite this

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title = "The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents",

abstract = "The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. {\textcopyright} 1984.",

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T1 - The effect of dopant contamination in undoped layers of a-Si

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AU - Hassan, Y. M.

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N2 - The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.

AB - The large variation in the characteristic temperature (Tt) obtained for undoped hydrogenated amorphous silicon films from space charge limited currents is explained by dopant contamination from adjacent n+-type contact layers. This uncontrolled doping effect can make films sensitive to photoinduced conductivity changes. Their conduction characteristics, and hence Tt, will then depend on previous heating and illumination history. © 1984.

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M3 - Article

VL - 49

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EP - 774

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 8

ER -

The effect of dopant contamination in undoped layers of a-Si: H on space charge limited currents

Abstract

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