The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

Dmytro O. Kundys; P. Murzyn; J.-P. R. Wells; A. I. Tartakovskii; M. S. Skolnick; Le Si Dang; E. V. Lutsenko; N. P. Tarasuk; O. G. Lyublinskaya; A. A. Toropov; S. V. Ivanov

doi:10.1063/1.2402793

The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

Dmytro O. Kundys, P. Murzyn, J.-P. R. Wells, A. I. Tartakovskii, M. S. Skolnick, Le Si Dang, E. V. Lutsenko, N. P. Tarasuk, O. G. Lyublinskaya, A. A. Toropov, S. V. Ivanov

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4 Citations (Scopus)

Abstract

We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 cm(-1) for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.

Original language	English
Article number	123510
Journal	Journal of Applied Physics
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.2402793
Publication status	Published - 15 Dec 2006

Keywords

ZNSE MATRIX
LASER
GAIN

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title = "The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots",

abstract = "We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 cm(-1) for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.",

keywords = "ZNSE MATRIX, LASER, GAIN",

author = "Kundys, {Dmytro O.} and P. Murzyn and Wells, {J.-P. R.} and Tartakovskii, {A. I.} and Skolnick, {M. S.} and Dang, {Le Si} and Lutsenko, {E. V.} and Tarasuk, {N. P.} and Lyublinskaya, {O. G.} and Toropov, {A. A.} and Ivanov, {S. V.}",

year = "2006",

month = dec,

day = "15",

doi = "10.1063/1.2402793",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

AU - Kundys, Dmytro O.

AU - Murzyn, P.

AU - Wells, J.-P. R.

AU - Tartakovskii, A. I.

AU - Skolnick, M. S.

AU - Dang, Le Si

AU - Lutsenko, E. V.

AU - Tarasuk, N. P.

AU - Lyublinskaya, O. G.

AU - Toropov, A. A.

AU - Ivanov, S. V.

PY - 2006/12/15

Y1 - 2006/12/15

N2 - We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 cm(-1) for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.

AB - We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 cm(-1) for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.

KW - ZNSE MATRIX

KW - LASER

KW - GAIN

U2 - 10.1063/1.2402793

DO - 10.1063/1.2402793

M3 - Article

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123510

ER -

The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

Abstract

Keywords

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