The doping of amorphous silicon for solar cells

F Riddoch, A Wallace, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

Schottky barrier diodes of gold on n-type amorphous silicon give photovoltages dependent on the silicon doping. The best voltages require an undoped layer of silicon for the junction region and approximately 100 nm of heavily doped silicon adjacent to the ohmic substrate contact. There is virtually no carrier collection outside the space charge region, as is shown by the long-wave photocurrent spectral response, and a drift field is desirable. High substrate temperatures during silicon deposition increase the long-wave wave response of these cells but give poorer diodes. © 1979.

Original languageEnglish
Pages (from-to)99-106
Number of pages8
JournalSolar Cells
Volume1
Issue number1
Publication statusPublished - Nov 1979

Fingerprint Dive into the research topics of 'The doping of amorphous silicon for solar cells'. Together they form a unique fingerprint.

Cite this