The development of II-VI semiconductors for blue diode lasers and optoelectronic devices

Kevin A. Prior

Research output: Contribution to journalArticle

Abstract

Current injection lasers operating in the blue and blue-green spectral regions have recently been fabricated from II-VI epitaxial layers grown by MBE. In this paper, these materials developments which have led to the production of the first II-VI lasers are described, followed by a section on the recent introduction of the new quaternary alloy ZnMgSSe. This alloy has allowed the production of CW room temperature lasing and the lifetime of the lasers to be increased. Recent results relating to the development of modulators and SEED devices are also described. © 1994.

Original languageEnglish
Pages (from-to)631-641
Number of pages11
JournalMicroelectronics Journal
Volume25
Issue number8
Publication statusPublished - Nov 1994

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