The controlled disordering of quantum-wells using surface oxidation

S  SHI; P L K  Wa; A  MILLER; J  PAMULAPATI; P  COOKE; M  DUTTA

doi:10.1088/0268-1242/9/8/021

The controlled disordering of quantum-wells using surface oxidation

S SHI
, P L K Wa
, A MILLER
, J PAMULAPATI
, P COOKE
, M DUTTA

School of Engineering & Physical Sciences

Research output: Contribution to journal › Letter › peer-review

6 Citations (Scopus)

Abstract

A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.

Original language	English
Pages (from-to)	1564-1566
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	9
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/9/8/021
Publication status	Published - Aug 1994

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10.1088/0268-1242/9/8/021

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title = "The controlled disordering of quantum-wells using surface oxidation",

abstract = "A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.",

author = "S SHI and Wa, \{P L K\} and A MILLER and J PAMULAPATI and P COOKE and M DUTTA",

year = "1994",

month = aug,

doi = "10.1088/0268-1242/9/8/021",

language = "English",

volume = "9",

pages = "1564--1566",

journal = "Semiconductor Science and Technology",

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TY - JOUR

T1 - The controlled disordering of quantum-wells using surface oxidation

AU - SHI, S

AU - Wa, P L K

AU - MILLER, A

AU - PAMULAPATI, J

AU - COOKE, P

AU - DUTTA, M

PY - 1994/8

Y1 - 1994/8

N2 - A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.

AB - A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.

U2 - 10.1088/0268-1242/9/8/021

DO - 10.1088/0268-1242/9/8/021

M3 - Letter

SN - 0268-1242

VL - 9

SP - 1564

EP - 1566

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

The controlled disordering of quantum-wells using surface oxidation

Abstract

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