The controlled disordering of quantum-wells using surface oxidation

S SHI, P L K Wa, A MILLER, J PAMULAPATI, P COOKE, M DUTTA

Research output: Contribution to journalLetter

Abstract

A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.

Original languageEnglish
Pages (from-to)1564-1566
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number8
DOIs
Publication statusPublished - Aug 1994

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