Abstract
The turn-on loss of high-speed insulated gate bipolar transistors (IGBT's) accounts for a significant proportion of the total switching energy. In many applications, this loss is increased by the energy associated with diode reverse recovery of current. Such energy is absorbed by the IGBT switch at high voltage. Linear turn-on snubber inductors may be used to control the turn-on loss, diode reverse recovery, and electromagnetic compatibility (EMC). These snubbers have the disadvantage of involving substantial stored energy that must be reset, normally by dissipation. An alternative is to use a saturable turn-on snubber inductor, which stores substantially less energy than a linear inductor. In this paper, the suitability of saturable turn-on snubber inductors for use with IGBT's is investigated, and possible circuit topologies for single-ended and bridge-leg applications are proposed. Mathematical analysis, simulation, and practical results are presented for the saturable inductor turn-on snubber circuit topologies.
| Original language | English |
|---|---|
| Pages (from-to) | 1101-1110 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 14 |
| Issue number | 6 |
| Publication status | Published - 1999 |
| Event | IEEE Trans on Power Electronics - Duration: 1 Jan 1999 → … |
Keywords
- Insulated gate bipolar transistors
- Snubbers