Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist

R. Zhang; Y. Li; J. Murray; A. S. Bunting; S. Smith; C. C. Dunare; J. T. M. Stevenson; M. P. Desmulliez; A. J. Walton

Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist

R. Zhang^*, Y. Li, J. Murray, A. S. Bunting, S. Smith, C. C. Dunare, J. T. M. Stevenson, M. P. Desmulliez, A. J. Walton

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6x6 cm with a horizontal and vertical pitch of 240 mu m. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 m Omega using the Kelvin contact resistance structures.

Original language	English
Title of host publication	2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)
Place of Publication	NEW YORK
Publisher	IEEE
Pages	37-42
Number of pages	6
Publication status	Published - 2013
Event	8th IEEE International Conference on Microelectronic Test Structures - Osaka, Japan Duration: 25 Mar 2013 → 28 Mar 2013

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Publisher	IEEE
ISSN (Print)	1071-9032

Conference

Conference	8th IEEE International Conference on Microelectronic Test Structures
Abbreviated title	ICMTS
Country/Territory	Japan
Period	25/03/13 → 28/03/13

Keywords

TSV
Kelvin structure
Daisy chain
electroplating
photoresist CMP

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Zhang, R., Li, Y., Murray, J., Bunting, A. S., Smith, S., Dunare, C. C., Stevenson, J. T. M., Desmulliez, M. P., & Walton, A. J. (2013). Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist. In 2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) (pp. 37-42). (IEEE International Conference on Microelectronic Test Structures). IEEE. http://www.research.ed.ac.uk/portal/en/publications/test-structures-for-electrical-evaluation-of-high-aspect-ratio-tsv-arrays-fabricated-using-planarised-sacrificial-photoresist(f65ad1dd-f97c-444e-8c66-f2182629d70c)/export.html

@inproceedings{8530dba8a1414da6af95f7b8767cd0ca,

title = "Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist",

abstract = "An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6x6 cm with a horizontal and vertical pitch of 240 mu m. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 m Omega using the Kelvin contact resistance structures.",

keywords = "TSV, Kelvin structure, Daisy chain, electroplating, photoresist CMP",

author = "R. Zhang and Y. Li and J. Murray and Bunting, {A. S.} and S. Smith and Dunare, {C. C.} and Stevenson, {J. T. M.} and Desmulliez, {M. P.} and Walton, {A. J.}",

year = "2013",

language = "English",

series = "IEEE International Conference on Microelectronic Test Structures",

publisher = "IEEE",

pages = "37--42",

booktitle = "2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)",

address = "United States",

note = "8th IEEE International Conference on Microelectronic Test Structures , ICMTS ; Conference date: 25-03-2013 Through 28-03-2013",

}

Zhang, R, Li, Y, Murray, J, Bunting, AS, Smith, S, Dunare, CC, Stevenson, JTM, Desmulliez, MP & Walton, AJ 2013, Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist. in 2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS). IEEE International Conference on Microelectronic Test Structures, IEEE, NEW YORK, pp. 37-42, 8th IEEE International Conference on Microelectronic Test Structures , Japan, 25/03/13. <http://www.research.ed.ac.uk/portal/en/publications/test-structures-for-electrical-evaluation-of-high-aspect-ratio-tsv-arrays-fabricated-using-planarised-sacrificial-photoresist(f65ad1dd-f97c-444e-8c66-f2182629d70c)/export.html>

Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist. / Zhang, R.; Li, Y.; Murray, J. et al.
2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS). NEW YORK: IEEE, 2013. p. 37-42 (IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist

AU - Zhang, R.

AU - Li, Y.

AU - Murray, J.

AU - Bunting, A. S.

AU - Smith, S.

AU - Dunare, C. C.

AU - Stevenson, J. T. M.

AU - Desmulliez, M. P.

AU - Walton, A. J.

PY - 2013

Y1 - 2013

N2 - An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6x6 cm with a horizontal and vertical pitch of 240 mu m. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 m Omega using the Kelvin contact resistance structures.

AB - An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6x6 cm with a horizontal and vertical pitch of 240 mu m. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 m Omega using the Kelvin contact resistance structures.

KW - TSV

KW - Kelvin structure

KW - Daisy chain

KW - electroplating

KW - photoresist CMP

M3 - Conference contribution

T3 - IEEE International Conference on Microelectronic Test Structures

SP - 37

EP - 42

BT - 2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)

PB - IEEE

CY - NEW YORK

T2 - 8th IEEE International Conference on Microelectronic Test Structures

Y2 - 25 March 2013 through 28 March 2013

ER -

Zhang R, Li Y, Murray J, Bunting AS, Smith S, Dunare CC et al. Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist. In 2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS). NEW YORK: IEEE. 2013. p. 37-42. (IEEE International Conference on Microelectronic Test Structures).

Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist

Abstract

Publication series

Conference

Keywords

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