Test Structures for Electrical Evaluation of High Aspect Ratio TSV Arrays Fabricated Using Planarised Sacrificial Photoresist

R. Zhang, Y. Li, J. Murray, A. S. Bunting, S. Smith, C. C. Dunare, J. T. M. Stevenson, M. P. Desmulliez, A. J. Walton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6x6 cm with a horizontal and vertical pitch of 240 mu m. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 m Omega using the Kelvin contact resistance structures.

Original languageEnglish
Title of host publication2013 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)
Place of PublicationNEW YORK
PublisherIEEE
Pages37-42
Number of pages6
Publication statusPublished - 2013
Event8th IEEE International Conference on Microelectronic Test Structures - Osaka, Japan
Duration: 25 Mar 201328 Mar 2013

Publication series

NameIEEE International Conference on Microelectronic Test Structures
PublisherIEEE
ISSN (Print)1071-9032

Conference

Conference8th IEEE International Conference on Microelectronic Test Structures
Abbreviated titleICMTS
CountryJapan
Period25/03/1328/03/13

Keywords

  • TSV
  • Kelvin structure
  • Daisy chain
  • electroplating
  • photoresist CMP

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