Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering

B. Urbaszek, E. J. McGhee, M. Krüger, R. J. Warburton, K. Karrai, T. Amand, B. D. Gerardot, P. M. Petroff, J. M. Garcia

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Abstract

We report temperature-dependent photoluminescence on neutral and charged excitons in individual InAs quantum dots. We find narrow emission lines for temperatures up to 30 K for exciton transitions where only the electron ground state is occupied. In contrast, for doubly charged excitons where the excited electron state is occupied, we observe a drastic increase of the ground state transition linewidth even at 30 K. We interpret this as evidence that the excited electron state is degenerate with the low energy tail of continuum states.

Original languageEnglish
Article number035304
Pages (from-to)353041-353046
Number of pages6
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume69
Issue number3
Publication statusPublished - Jan 2004

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    Urbaszek, B., McGhee, E. J., Krüger, M., Warburton, R. J., Karrai, K., Amand, T., Gerardot, B. D., Petroff, P. M., & Garcia, J. M. (2004). Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering. Physical Review B: Condensed Matter and Materials Physics, 69(3), 353041-353046. [035304].