Temperature dependent high resolution resonant spectroscopy on a charged quantum dot

M. Kroner, K. M. Weiss, S. Seidl, R. J. Warburton, A. Badolato, P. M. Petroff, K. Karrai

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Abstract

We present temperature dependent high resolution resonant optical spectroscopy on a single, negatively charged InGaAs quantum dot. We performed laser transmission measurements yielding the natural linewidth of the excitonic ground state transition of a quantum dot in a temperature range from 4.2 K up to 25 K. Here, we describe the linewidth evolution and the temperature induced red shift of the resonance energy with simple models based on the exciton-phonon coupling in the quantum dot. The resonant spectroscopy measurements are complemented with results from non-resonant PL measurements on the very same quantum dot. Here we observe a simple linear behavior of the linewidth according to an effect of a fluctuating environment. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)795-798
Number of pages4
JournalPhysica Status Solidi B - Basic Research
Volume246
Issue number4
DOIs
Publication statusPublished - Apr 2009

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    Kroner, M., Weiss, K. M., Seidl, S., Warburton, R. J., Badolato, A., Petroff, P. M., & Karrai, K. (2009). Temperature dependent high resolution resonant spectroscopy on a charged quantum dot. Physica Status Solidi B - Basic Research, 246(4), 795-798. https://doi.org/10.1002/pssb.200880610