Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy

J. S. Massa; G. S. Buller; S. J. Fancey; A. C. Walker; J. Simpson; J. T. Mullins; G. Horsburgh; S. Y. Wang; Paul Joseph Thompson; Issac Hauksson; K. A. Prior; B. C. Cavenett

Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy

J. S. Massa
, G. S. Buller
, S. J. Fancey
, A. C. Walker
, J. Simpson
, J. T. Mullins
, G. Horsburgh
, S. Y. Wang
, Paul Joseph Thompson
, Issac Hauksson
, K. A. Prior
, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.

Original language	English
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Pages	225-226
Number of pages	2
Volume	8
Publication status	Published - 1994
Event	Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA Duration: 8 May 1994 → 13 May 1994

Conference

Conference	Proceedings of the 21st International Quantum Electronics Conference (IQEC'94)
City	Anaheim, CA, USA
Period	8/05/94 → 13/05/94

Cite this

Massa, J. S., Buller, G. S., Fancey, S. J., Walker, A. C., Simpson, J., Mullins, J. T., Horsburgh, G., Wang, S. Y., Thompson, P. J., Hauksson, I., Prior, K. A., & Cavenett, B. C. (1994). Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting (Vol. 8, pp. 225-226)

@inproceedings{715867673704425190407a6aa3a56d51,

title = "Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy",

abstract = "The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.",

author = "Massa, \{J. S.\} and Buller, \{G. S.\} and Fancey, \{S. J.\} and Walker, \{A. C.\} and J. Simpson and Mullins, \{J. T.\} and G. Horsburgh and Wang, \{S. Y.\} and Thompson, \{Paul Joseph\} and Issac Hauksson and Prior, \{K. A.\} and Cavenett, \{B. C.\}",

year = "1994",

language = "English",

isbn = "0780319710",

volume = "8",

pages = "225--226",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",

note = "Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) ; Conference date: 08-05-1994 Through 13-05-1994",

}

Massa, JS, Buller, GS, Fancey, SJ, Walker, AC, Simpson, J, Mullins, JT, Horsburgh, G, Wang, SY, Thompson, PJ, Hauksson, I, Prior, KA & Cavenett, BC 1994, Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. vol. 8, pp. 225-226, Proceedings of the 21st International Quantum Electronics Conference (IQEC'94), Anaheim, CA, USA, 8/05/94.

TY - GEN

T1 - Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy

AU - Massa, J. S.

AU - Buller, G. S.

AU - Fancey, S. J.

AU - Walker, A. C.

AU - Simpson, J.

AU - Mullins, J. T.

AU - Horsburgh, G.

AU - Wang, S. Y.

AU - Thompson, Paul Joseph

AU - Hauksson, Issac

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1994

Y1 - 1994

N2 - The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.

AB - The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.

UR - https://www.scopus.com/pages/publications/0028064151

M3 - Conference contribution

SN - 0780319710

VL - 8

SP - 225

EP - 226

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting

T2 - Proceedings of the 21st International Quantum Electronics Conference (IQEC'94)

Y2 - 8 May 1994 through 13 May 1994

ER -

Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy

Abstract

Conference

Other files and links

Fingerprint

Cite this