Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, S. J. Fancey, A. C. Walker, J. Simpson, J. T. Mullins, G. Horsburgh, S. Y. Wang, Paul Joseph Thompson, Issac Hauksson, K. A. Prior, B. C. Cavenett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Pages225-226
Number of pages2
Volume8
Publication statusPublished - 1994
EventProceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA
Duration: 8 May 199413 May 1994

Conference

ConferenceProceedings of the 21st International Quantum Electronics Conference (IQEC'94)
CityAnaheim, CA, USA
Period8/05/9413/05/94

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molecular beam epitaxy
microscopes
quantum wells
solid state
photoluminescence
temperature

Cite this

Massa, J. S., Buller, G. S., Fancey, S. J., Walker, A. C., Simpson, J., Mullins, J. T., ... Cavenett, B. C. (1994). Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting (Vol. 8, pp. 225-226)
Massa, J. S. ; Buller, G. S. ; Fancey, S. J. ; Walker, A. C. ; Simpson, J. ; Mullins, J. T. ; Horsburgh, G. ; Wang, S. Y. ; Thompson, Paul Joseph ; Hauksson, Issac ; Prior, K. A. ; Cavenett, B. C. / Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Vol. 8 1994. pp. 225-226
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title = "Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy",
abstract = "The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.",
author = "Massa, {J. S.} and Buller, {G. S.} and Fancey, {S. J.} and Walker, {A. C.} and J. Simpson and Mullins, {J. T.} and G. Horsburgh and Wang, {S. Y.} and Thompson, {Paul Joseph} and Issac Hauksson and Prior, {K. A.} and Cavenett, {B. C.}",
year = "1994",
language = "English",
isbn = "0780319710",
volume = "8",
pages = "225--226",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",

}

Massa, JS, Buller, GS, Fancey, SJ, Walker, AC, Simpson, J, Mullins, JT, Horsburgh, G, Wang, SY, Thompson, PJ, Hauksson, I, Prior, KA & Cavenett, BC 1994, Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. vol. 8, pp. 225-226, Proceedings of the 21st International Quantum Electronics Conference (IQEC'94), Anaheim, CA, USA, 8/05/94.

Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy. / Massa, J. S.; Buller, G. S.; Fancey, S. J.; Walker, A. C.; Simpson, J.; Mullins, J. T.; Horsburgh, G.; Wang, S. Y.; Thompson, Paul Joseph; Hauksson, Issac; Prior, K. A.; Cavenett, B. C.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Vol. 8 1994. p. 225-226.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy

AU - Massa, J. S.

AU - Buller, G. S.

AU - Fancey, S. J.

AU - Walker, A. C.

AU - Simpson, J.

AU - Mullins, J. T.

AU - Horsburgh, G.

AU - Wang, S. Y.

AU - Thompson, Paul Joseph

AU - Hauksson, Issac

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1994

Y1 - 1994

N2 - The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.

AB - The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.

UR - http://www.scopus.com/inward/record.url?scp=0028064151&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0780319710

VL - 8

SP - 225

EP - 226

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting

ER -

Massa JS, Buller GS, Fancey SJ, Walker AC, Simpson J, Mullins JT et al. Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Vol. 8. 1994. p. 225-226