Temperature-dependent carrier recombination in ZnSe based structures grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, S. J. Fancey, A. C. Walker, J. Simpson, J. T. Mullins, G. Horsburgh, S. Y. Wang, Paul Joseph Thompson, Issac Hauksson, K. A. Prior, B. C. Cavenett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The paper presents temperature dependent time-resolved photoluminescence (TRPL) measurements, on both bulk n- and p-type doped ZnSe, and undoped quantum well materials. The measurements were performed on an all-solid-state microscope-based instrument.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Pages225-226
Number of pages2
Volume8
Publication statusPublished - 1994
EventProceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA
Duration: 8 May 199413 May 1994

Conference

ConferenceProceedings of the 21st International Quantum Electronics Conference (IQEC'94)
CityAnaheim, CA, USA
Period8/05/9413/05/94

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