Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP

Xiao Jin; Shiyu Xie; Baolai Liang; Xin Yi; Harry Lewis; Leh Woon Lim; Yifan Liu; Beng Koon Ng; Diana Huffaker; Chee Hing Tan; Duu-Sheng Ong; John P. David

doi:10.1109/JSTQE.2021.3099912

Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP

Xiao Jin, Shiyu Xie, Baolai Liang, Xin Yi, Harry Lewis, Leh Woon Lim, Yifan Liu, Beng Koon Ng, Diana Huffaker, Chee Hing Tan, Duu-Sheng Ong, John P. David

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Abstract

The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p+-i-n+ structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.

Original language	English
Article number	3801208
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	28
Issue number	2
Early online date	26 Jul 2021
DOIs	https://doi.org/10.1109/JSTQE.2021.3099912
Publication status	Published - Mar 2022

Keywords

AlAsSb
Avalanche breakdown
avalanche photodiode (APD)
III-V semiconductor materials
impact ionization
InAlAs temperature dependence
Indium compounds
Indium phosphide
InP
ionization coefficient
Monte Carlo modelling
Semiconductor device measurement
Temperature dependence
Temperature measurement
Temperature sensors

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{d4339e863572486e930c2ffd0ccce85c,

title = "Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP",

abstract = "The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p+-i-n+ structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.",

keywords = "AlAsSb, Avalanche breakdown, avalanche photodiode (APD), III-V semiconductor materials, impact ionization, InAlAs temperature dependence, Indium compounds, Indium phosphide, InP, ionization coefficient, Monte Carlo modelling, Semiconductor device measurement, Temperature dependence, Temperature measurement, Temperature sensors",

author = "Xiao Jin and Shiyu Xie and Baolai Liang and Xin Yi and Harry Lewis and Lim, {Leh Woon} and Yifan Liu and Ng, {Beng Koon} and Diana Huffaker and Tan, {Chee Hing} and Duu-Sheng Ong and David, {John P.}",

note = "Funding Information: Manuscript received May 19, 2021; revised July 11, 2021; accepted July 20, 2021. Date of publication July 26, 2021; date of current version September 6, 2021. The work of Chee Hing Tan and John P.R. David was supported in part by Engineering and Physical Science Research Council (EPSRC) under Grant EP/N020715/1. The work of Diana L. Huffaker was supported in part by the S{\^e}r Cymru National Research Network in Advanced Engineering and Materials. The work of Shiyu Xie was supported in part by the European Regional Development Fund through the Welsh Government. The work of Harry Lewis was supported in part by EPSRC studentship under Grant EP/R513313/1. (Corresponding author: Xiao Jin.) Xiao Jin, Harry Lewis, Leh W. Lim, Yifan Liu, Chee Hing Tan, and John P. R. David are with the Electronic and Electrical Engineering Department, University of Sheffield, Sir Frederick Mappin Building, Mappin Street Sheffield S1 3JD, United Kingdom (e-mail: xjin4@sheffield.ac.uk; hlewis2@sheffield.ac.uk; lwlim1@sheffield.ac.uk; yfliu1@sheffield.ac.uk; c.h.tan@sheffield.ac.uk; j.p.david@sheffield.ac.uk). Publisher Copyright: {\textcopyright} 1995-2012 IEEE.",

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doi = "10.1109/JSTQE.2021.3099912",

language = "English",

volume = "28",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

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T1 - Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP

AU - Jin, Xiao

AU - Xie, Shiyu

AU - Liang, Baolai

AU - Yi, Xin

AU - Lewis, Harry

AU - Lim, Leh Woon

AU - Liu, Yifan

AU - Ng, Beng Koon

AU - Huffaker, Diana

AU - Tan, Chee Hing

AU - Ong, Duu-Sheng

AU - David, John P.

N1 - Funding Information: Manuscript received May 19, 2021; revised July 11, 2021; accepted July 20, 2021. Date of publication July 26, 2021; date of current version September 6, 2021. The work of Chee Hing Tan and John P.R. David was supported in part by Engineering and Physical Science Research Council (EPSRC) under Grant EP/N020715/1. The work of Diana L. Huffaker was supported in part by the Sêr Cymru National Research Network in Advanced Engineering and Materials. The work of Shiyu Xie was supported in part by the European Regional Development Fund through the Welsh Government. The work of Harry Lewis was supported in part by EPSRC studentship under Grant EP/R513313/1. (Corresponding author: Xiao Jin.) Xiao Jin, Harry Lewis, Leh W. Lim, Yifan Liu, Chee Hing Tan, and John P. R. David are with the Electronic and Electrical Engineering Department, University of Sheffield, Sir Frederick Mappin Building, Mappin Street Sheffield S1 3JD, United Kingdom (e-mail: xjin4@sheffield.ac.uk; hlewis2@sheffield.ac.uk; lwlim1@sheffield.ac.uk; yfliu1@sheffield.ac.uk; c.h.tan@sheffield.ac.uk; j.p.david@sheffield.ac.uk). Publisher Copyright: © 1995-2012 IEEE.

PY - 2022/3

Y1 - 2022/3

N2 - The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p+-i-n+ structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.

AB - The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p+-i-n+ structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.

KW - AlAsSb

KW - Avalanche breakdown

KW - avalanche photodiode (APD)

KW - III-V semiconductor materials

KW - impact ionization

KW - InAlAs temperature dependence

KW - Indium compounds

KW - Indium phosphide

KW - InP

KW - ionization coefficient

KW - Monte Carlo modelling

KW - Semiconductor device measurement

KW - Temperature dependence

KW - Temperature measurement

KW - Temperature sensors

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U2 - 10.1109/JSTQE.2021.3099912

DO - 10.1109/JSTQE.2021.3099912

M3 - Article

AN - SCOPUS:85112670761

SN - 1077-260X

VL - 28

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 2

M1 - 3801208

ER -

Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP

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