Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP

Xiao Jin, Shiyu Xie, Baolai Liang, Xin Yi, Harry Lewis, Leh Woon Lim, Yifan Liu, Beng Koon Ng, Diana Huffaker, Chee Hing Tan, Duu-Sheng Ong, John P. David

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Abstract

The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p+-i-n+ structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.

Original languageEnglish
Article number3801208
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume28
Issue number2
Early online date26 Jul 2021
DOIs
Publication statusE-pub ahead of print - 26 Jul 2021

Keywords

  • AlAsSb
  • Avalanche breakdown
  • avalanche photodiode (APD)
  • III-V semiconductor materials
  • impact ionization
  • InAlAs temperature dependence
  • Indium compounds
  • Indium phosphide
  • InP
  • ionization coefficient
  • Monte Carlo modelling
  • Semiconductor device measurement
  • Temperature dependence
  • Temperature measurement
  • Temperature sensors

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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