TY - JOUR
T1 - Temperature dependence of the impact ionization coefficients in AlAsSb lattice matched to InP
AU - Jin, Xiao
AU - Xie, Shiyu
AU - Liang, Baolai
AU - Yi, Xin
AU - Lewis, Harry
AU - Lim, Leh Woon
AU - Liu, Yifan
AU - Ng, Beng Koon
AU - Huffaker, Diana
AU - Tan, Chee Hing
AU - Ong, Duu-Sheng
AU - David, John P.
N1 - Funding Information:
Manuscript received May 19, 2021; revised July 11, 2021; accepted July 20, 2021. Date of publication July 26, 2021; date of current version September 6, 2021. The work of Chee Hing Tan and John P.R. David was supported in part by Engineering and Physical Science Research Council (EPSRC) under Grant EP/N020715/1. The work of Diana L. Huffaker was supported in part by the Sêr Cymru National Research Network in Advanced Engineering and Materials. The work of Shiyu Xie was supported in part by the European Regional Development Fund through the Welsh Government. The work of Harry Lewis was supported in part by EPSRC studentship under Grant EP/R513313/1. (Corresponding author: Xiao Jin.) Xiao Jin, Harry Lewis, Leh W. Lim, Yifan Liu, Chee Hing Tan, and John P. R. David are with the Electronic and Electrical Engineering Department, University of Sheffield, Sir Frederick Mappin Building, Mappin Street Sheffield S1 3JD, United Kingdom (e-mail: [email protected]; [email protected]; [email protected]; [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 1995-2012 IEEE.
PY - 2022/3
Y1 - 2022/3
N2 - The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p+-i-n+ structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.
AB - The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-i-n+ and two n+-i-p+ diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 μm thick p+-i-n+ structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.
KW - AlAsSb
KW - Avalanche breakdown
KW - avalanche photodiode (APD)
KW - III-V semiconductor materials
KW - impact ionization
KW - InAlAs temperature dependence
KW - Indium compounds
KW - Indium phosphide
KW - InP
KW - ionization coefficient
KW - Monte Carlo modelling
KW - Semiconductor device measurement
KW - Temperature dependence
KW - Temperature measurement
KW - Temperature sensors
UR - http://www.scopus.com/inward/record.url?scp=85112670761&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2021.3099912
DO - 10.1109/JSTQE.2021.3099912
M3 - Article
AN - SCOPUS:85112670761
SN - 1077-260X
VL - 28
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
IS - 2
M1 - 3801208
ER -