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Temperature dependence of the electron spin g factor in GaAs
W. Zawadzki
, P. Pfeffer
, R. Bratschitsch
, Z. Chen
, S. T. Cundiff
, B. N. Murdin
,
C. R. Pidgeon
School of Engineering & Physical Sciences
Research output
:
Contribution to journal
›
Article
›
peer-review
39
Citations (Scopus)
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INIS
temperature dependence
100%
spin
100%
electrons
100%
gallium arsenides
100%
lande factor
100%
levels
66%
experimental data
33%
time resolution
33%
rotation
16%
temperature range 0273-0400 k
16%
vectors
16%
energy
16%
energy gap
16%
photoluminescence
16%
temperature range
16%
g value
16%
faraday rotation
16%
larmor precession
16%
temperature (electron)
16%
Engineering
Gallium Arsenide
100%
Temperature Dependence
100%
Good Agreement
33%
Temperature Range
33%
Room Temperature
33%
Band Gap
33%
Conduction Band
33%
Electron Energy
33%
Physics
Temperature Dependence
100%
Electron Spin
100%
Conduction Band
33%
Electron Energy
33%
Room Temperature
33%
Photoluminescence
33%
Faraday Effect
33%