Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 μm and its impact on mode-locked quantum-dot lasers

Maria Ana Cataluna, D. B. Malins, Alvaro Gomez-Iglesias, W. Sibbett, Alan Miller, E. U. Rafailov

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Abstract

We report temperature-dependent absorption recovery times in an InAs p-i-n ridge waveguide quantum-dot modulator under low reverse bias, investigated via subpicosecond pump-probe measurements. The measured decrease in absorption recovery time with increasing temperature (293-319 K) is in excellent agreement with a thermionic emission model. A similar trend in pulse duration with increasing temperature is also observed from a two-section mode-locked quantum-dot laser fabricated from a similar epitaxial structure. These measurements confirm the key role of the absorber recovery time in the reduction in the pulses generated by two-section mode-locked quantum-dot lasers, both at room and elevated temperatures. © 2010 American Institute of Physics.

Original languageEnglish
Article number121110
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number12
DOIs
Publication statusPublished - 20 Sep 2010

Keywords

  • AMPLIFIERS
  • EMISSION

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