Temperature and doping dependence of spin relaxation in n -InAs

B. N. Murdin, K. Litvinenko, J. Allam, C. R. Pidgeon, M. Bird, K. Morrison, T. Zhang, S. K. Clowes, W. R. Branford, J. Harris, L. F. Cohen

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Abstract

We have used time-resolved spectroscopy to measure the relaxation of spin polarizations in the narrow gap semiconductor material n -InAs as a function of temperature, doping, and pump wavelength. The results are consistent with the D'Yakonov-Perel mechanism for temperatures between 77 and 300 K. However, the data suggest that electron-electron scattering should be taken into account in determining the dependence of the spin lifetime on the carrier concentration in the range 5.2× 1016 -8.8× 1017 cm-3. For a sample with doping of 1.22× 1017 cm-3 the spin lifetime was 24 ps at room temperature. By applying a magnetic field in the sample plane we also observed coherent precession of the spins in the time domain, with a g factor g* =-13, also at room temperature. © 2005 The American Physical Society.

Original languageEnglish
Article number085346
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume72
Issue number8
DOIs
Publication statusPublished - 15 Aug 2005

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    Murdin, B. N., Litvinenko, K., Allam, J., Pidgeon, C. R., Bird, M., Morrison, K., Zhang, T., Clowes, S. K., Branford, W. R., Harris, J., & Cohen, L. F. (2005). Temperature and doping dependence of spin relaxation in n -InAs. Physical Review B: Condensed Matter and Materials Physics, 72(8), [085346]. https://doi.org/10.1103/PhysRevB.72.085346