Abstract
A polysilane of formula -(-SiHn-)-x where n is 1 or 2 and x is large (10, 20 or more) may be a precursor of amorphous silicon films and is synthesised by treating SiHmX4-m, where m is 1, 2 or 3 and X is halogen, preferably SiH2C12 or SiHC13, with lithium suspended in a liquid inert to the reagents and non-solvent for the polysilane, preferably tetrahydrofuran.
| Original language | English |
|---|---|
| Patent number | GB2077710 |
| Priority date | 11/06/80 |
| Filing date | 3/06/81 |
| Publication status | Published - 23 Dec 1980 |