Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Irina Afonina; Peter J Skabara; Filipe Vilela; Alexander L. Kanibolotsky; John C Forgie; Ashu K. Bansal; Graham A. Turnbull; Ifor D. W. Samuel; John G. Labram; Thomas D. Anthopoulos; Simon J. Coles; Michael B. Hursthouse

doi:10.1039/b919574b

Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Irina Afonina, Peter J Skabara, Filipe Vilela, Alexander L. Kanibolotsky, John C Forgie, Ashu K. Bansal, Graham A. Turnbull, Ifor D. W. Samuel, John G. Labram, Thomas D. Anthopoulos, Simon J. Coles, Michael B. Hursthouse

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V(-1) s(-1).

Original language	English
Pages (from-to)	1112-1116
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	20
Issue number	6
DOIs	https://doi.org/10.1039/b919574b
Publication status	Published - 14 Feb 2010

Keywords

THIN-FILM TRANSISTORS
RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES
STACKED ORGANIC SEMICONDUCTOR
FIELD-EFFECT TRANSISTORS
SOLID-STATE PROPERTIES
FUSED THIOPHENES
PHOTOLUMINESCENCE EFFICIENCY
ALPHA-OLIGOTHIOPHENES
7 RINGS
CRYSTAL

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Afonina, I., Skabara, P. J., Vilela, F., Kanibolotsky, A. L., Forgie, J. C., Bansal, A. K., Turnbull, G. A., Samuel, I. D. W., Labram, J. G., Anthopoulos, T. D., Coles, S. J., & Hursthouse, M. B. (2010). Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials. Journal of Materials Chemistry, 20(6), 1112-1116. https://doi.org/10.1039/b919574b

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title = "Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials",

abstract = "Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V(-1) s(-1).",

keywords = "THIN-FILM TRANSISTORS, RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES, STACKED ORGANIC SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS, SOLID-STATE PROPERTIES, FUSED THIOPHENES, PHOTOLUMINESCENCE EFFICIENCY, ALPHA-OLIGOTHIOPHENES, 7 RINGS, CRYSTAL",

author = "Irina Afonina and Skabara, {Peter J} and Filipe Vilela and Kanibolotsky, {Alexander L.} and Forgie, {John C} and Bansal, {Ashu K.} and Turnbull, {Graham A.} and Samuel, {Ifor D. W.} and Labram, {John G.} and Anthopoulos, {Thomas D.} and Coles, {Simon J.} and Hursthouse, {Michael B.}",

year = "2010",

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doi = "10.1039/b919574b",

language = "English",

volume = "20",

pages = "1112--1116",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

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T1 - Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

AU - Afonina, Irina

AU - Skabara, Peter J

AU - Vilela, Filipe

AU - Kanibolotsky, Alexander L.

AU - Forgie, John C

AU - Bansal, Ashu K.

AU - Turnbull, Graham A.

AU - Samuel, Ifor D. W.

AU - Labram, John G.

AU - Anthopoulos, Thomas D.

AU - Coles, Simon J.

AU - Hursthouse, Michael B.

PY - 2010/2/14

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N2 - Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V(-1) s(-1).

AB - Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V(-1) s(-1).

KW - THIN-FILM TRANSISTORS

KW - RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES

KW - STACKED ORGANIC SEMICONDUCTOR

KW - FIELD-EFFECT TRANSISTORS

KW - SOLID-STATE PROPERTIES

KW - FUSED THIOPHENES

KW - PHOTOLUMINESCENCE EFFICIENCY

KW - ALPHA-OLIGOTHIOPHENES

KW - 7 RINGS

KW - CRYSTAL

U2 - 10.1039/b919574b

DO - 10.1039/b919574b

M3 - Article

SN - 0959-9428

VL - 20

SP - 1112

EP - 1116

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 6

ER -

Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Abstract

Keywords

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