Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Irina Afonina, Peter J Skabara, Filipe Vilela, Alexander L. Kanibolotsky, John C Forgie, Ashu K. Bansal, Graham A. Turnbull, Ifor D. W. Samuel, John G. Labram, Thomas D. Anthopoulos, Simon J. Coles, Michael B. Hursthouse

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13 Citations (Scopus)

Abstract

Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V(-1) s(-1).

Original languageEnglish
Pages (from-to)1112-1116
Number of pages5
JournalJournal of Materials Chemistry
Volume20
Issue number6
DOIs
Publication statusPublished - 14 Feb 2010

Keywords

  • THIN-FILM TRANSISTORS
  • RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES
  • STACKED ORGANIC SEMICONDUCTOR
  • FIELD-EFFECT TRANSISTORS
  • SOLID-STATE PROPERTIES
  • FUSED THIOPHENES
  • PHOTOLUMINESCENCE EFFICIENCY
  • ALPHA-OLIGOTHIOPHENES
  • 7 RINGS
  • CRYSTAL

Cite this

Afonina, I., Skabara, P. J., Vilela, F., Kanibolotsky, A. L., Forgie, J. C., Bansal, A. K., Turnbull, G. A., Samuel, I. D. W., Labram, J. G., Anthopoulos, T. D., Coles, S. J., & Hursthouse, M. B. (2010). Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials. Journal of Materials Chemistry, 20(6), 1112-1116. https://doi.org/10.1039/b919574b