Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Irina Afonina, Peter J Skabara, Filipe Vilela, Alexander L. Kanibolotsky, John C Forgie, Ashu K. Bansal, Graham A. Turnbull, Ifor D. W. Samuel, John G. Labram, Thomas D. Anthopoulos, Simon J. Coles, Michael B. Hursthouse

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13 Citations (Scopus)

Abstract

Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V(-1) s(-1).

Original languageEnglish
Pages (from-to)1112-1116
Number of pages5
JournalJournal of Materials Chemistry
Volume20
Issue number6
DOIs
Publication statusPublished - 14 Feb 2010

Keywords

  • THIN-FILM TRANSISTORS
  • RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES
  • STACKED ORGANIC SEMICONDUCTOR
  • FIELD-EFFECT TRANSISTORS
  • SOLID-STATE PROPERTIES
  • FUSED THIOPHENES
  • PHOTOLUMINESCENCE EFFICIENCY
  • ALPHA-OLIGOTHIOPHENES
  • 7 RINGS
  • CRYSTAL

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