Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524 As MOVPE grown onto InP(001)

J. M. Sasaki, L. P. Cardoso, C. Campos, K. J. Roberts, G. F. Clark, E. Pantos, M. A. Sacilotti

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Abstract

Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al0.304Ga0.172In0.524As hetero-epitaxial layer MOVPE grown onto InP(001). (006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a? = 5.8755 ± 0.0003 Å, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obtained from the 222 222 intensity modulation on the substrate RS MORSI (modulation on the RS intensity due to the presence of the epilayers, Greenberg and Ladell, Appl. Phys. Lett 50 (1987) 436), which gives a? = 5.877 ± 0.002 Å. Simulation of the layer RS using the MULTX program is consistent with a layer normal lattice parameter a? = 5.8574 Å in good agreement with the corresponding experimental data.

Original languageEnglish
Pages (from-to)284-290
Number of pages7
JournalJournal of Crystal Growth
Volume172
Issue number3-4
Publication statusPublished - Mar 1997

Keywords

  • Hetero-epitaxial growth
  • III-V compounds
  • MOVPE
  • Synchrotron radiation multiple diffraction

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    Sasaki, J. M., Cardoso, L. P., Campos, C., Roberts, K. J., Clark, G. F., Pantos, E., & Sacilotti, M. A. (1997). Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524 As MOVPE grown onto InP(001). Journal of Crystal Growth, 172(3-4), 284-290.