Surface phosphidation of GaAs by the laser-induced dissociation of trimethylphosphine

Jack L. Davidson; Phillip John; Peter G. Roberts; Michael G. Jubber; J. I B Wilson

doi:10.1063/1.112063

Surface phosphidation of GaAs by the laser-induced dissociation of trimethylphosphine

Jack L. Davidson, Phillip John, Peter G. Roberts, Michael G. Jubber, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The localized phosphidation of single-crystal GaAs, by the frequency doubled argon ion laser photolysis at 257 nm of P(CH₃)₃, is reported. Tracks were deposited by scanning the focused laser beam at a speed of 34.6 µm s^-1 and were characterized by scanning electron microscopy and laser ionization mass analysis. Evidence is presented which suggests that a photochemical reaction is initiated by band gap absorption by GaAs.

Original language	English
Pages (from-to)	1397-1399
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	11
DOIs	https://doi.org/10.1063/1.112063
Publication status	Published - 1994

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@article{462ca779aafb4dbe9c3fcc8989092ca3,

title = "Surface phosphidation of GaAs by the laser-induced dissociation of trimethylphosphine",

abstract = "The localized phosphidation of single-crystal GaAs, by the frequency doubled argon ion laser photolysis at 257 nm of P(CH3)3, is reported. Tracks were deposited by scanning the focused laser beam at a speed of 34.6 µm s-1 and were characterized by scanning electron microscopy and laser ionization mass analysis. Evidence is presented which suggests that a photochemical reaction is initiated by band gap absorption by GaAs.",

author = "Davidson, \{Jack L.\} and Phillip John and Roberts, \{Peter G.\} and Jubber, \{Michael G.\} and Wilson, \{J. I B\}",

year = "1994",

doi = "10.1063/1.112063",

language = "English",

volume = "65",

pages = "1397--1399",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - Surface phosphidation of GaAs by the laser-induced dissociation of trimethylphosphine

AU - Davidson, Jack L.

AU - John, Phillip

AU - Roberts, Peter G.

AU - Jubber, Michael G.

AU - Wilson, J. I B

PY - 1994

Y1 - 1994

N2 - The localized phosphidation of single-crystal GaAs, by the frequency doubled argon ion laser photolysis at 257 nm of P(CH3)3, is reported. Tracks were deposited by scanning the focused laser beam at a speed of 34.6 µm s-1 and were characterized by scanning electron microscopy and laser ionization mass analysis. Evidence is presented which suggests that a photochemical reaction is initiated by band gap absorption by GaAs.

AB - The localized phosphidation of single-crystal GaAs, by the frequency doubled argon ion laser photolysis at 257 nm of P(CH3)3, is reported. Tracks were deposited by scanning the focused laser beam at a speed of 34.6 µm s-1 and were characterized by scanning electron microscopy and laser ionization mass analysis. Evidence is presented which suggests that a photochemical reaction is initiated by band gap absorption by GaAs.

U2 - 10.1063/1.112063

DO - 10.1063/1.112063

M3 - Article

SN - 0003-6951

VL - 65

SP - 1397

EP - 1399

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Surface phosphidation of GaAs by the laser-induced dissociation of trimethylphosphine

Abstract

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