Surface phosphidation of GaAs by the laser-induced dissociation of trimethylphosphine

Jack L. Davidson, Phillip John, Peter G. Roberts, Michael G. Jubber, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

The localized phosphidation of single-crystal GaAs, by the frequency doubled argon ion laser photolysis at 257 nm of P(CH3)3, is reported. Tracks were deposited by scanning the focused laser beam at a speed of 34.6 µm s-1 and were characterized by scanning electron microscopy and laser ionization mass analysis. Evidence is presented which suggests that a photochemical reaction is initiated by band gap absorption by GaAs.

Original languageEnglish
Pages (from-to)1397-1399
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number11
DOIs
Publication statusPublished - 1994

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