Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors

We review the methods that have been used for suppressing non-radiative processes in mid-infrared (MIR) semiconductor lasers and detectors. Specifically we discuss the results of techniques that have been used recently to minimise the deleterious effect of Auger recombination processes in interbank detectors and (bi-polar) lasers, and of phonon scattering in quantum well photodetectors (QWIPs) and quantum cascade (QC) lasers. After summarising the theory of the suppression of Auger and phonon processes in these devices, sections are devoted to specific III-V, II-VI and lead salt materials systems; further sections are devoted to subband detectors, subband cascade lasers, interband cascade lasers and to non-equilibrium devices from the InSb and HgCdTe systems. © 1998 Elsevier Science Ltd. All rights reserved * Abbreviations: BL: background limited; CHCC: electron Auger (type 1) process; CHLH: hole Auger (type 7) process; CHSH: hole Auger (split-off band) process; DH: double heterostructure; FELIX: free electron laser for infrared experiments; FOV: field of view; hh, HH: heavy hole; HOT: high operating temperature; LED: light emitting diode; 1h, LH: light hole; LO: longitudinal optical; MBE: molecular beam epitaxy; MCT: mercury cadmium telluride; MIR: mid-infrared; MIS: metal insulator semiconductor; MOCVD: metal organic chemical vapour deposition; NGS: narrow gap semiconductor; QC: quantum cascade; QW: quantum well; QWIP: quantum well infrared photodetector; SLMQW: superlattice multiple quantum well; SLS: strained layer superlattice; T2ICL: type II interband cascade laser.