Using picosecond pulses from a free-electron laser, we have carried out a pump-probe determination of Shockley-Read-Hall (SRH) and Auger free-carrier recombination lifetimes in two long-wave (6-7 µm) W-structure laser with InAs/Ga1_xInxSb/InAs/AlSb active regions. The SRH coefficient is nearly constant (A ? 4.0 × 108 s-1), while the Auger coefficient has an upper limit of C = 4.0 × 10-27 to 2.2 × 10-27 cm6/s in the temperature range 40-230 K. This represents an order of magnitude Auger suppression compared to type-I III-V semiconductors with the same energy gap.
|Number of pages||4|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 15 Oct 2000|