Sub-1 V, Pico-Watt Subthreshold CMOS Voltage Reference Circuit with Dual Temperature Compensation

Sadeque Reza Khan

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A pico-watt CMOS voltage reference is developed using an SK Hynix 0.18 µm CMOS process. The proposed architecture is resistorless and consists of MOSFET circuits operated in the subthreshold region. A dual temperature compensation technique is utilized to produce a near-zero temperature coefficient reference output voltage. Experimental results demonstrate an average reference voltage of 250.7 mV, with a temperature coefficient as low as 3.2 ppm/°C for 0 to 125 °C range, while the power consumption is 545 pW under a 420 mV power supply at 27 °C. The power supply rejection ratio and output noise without any filtering capacitor at 100 Hz are −54.5 dB and 2.88 µV/Hz1/2, respectively. The active area of the fabricated chip is 0.00332 mm2.
Original languageEnglish
Pages (from-to)41-45
Number of pages5
JournalAEU - International Journal of Electronics and Communications
Volume78
Early online date17 May 2017
DOIs
Publication statusPublished - Aug 2017

Fingerprint

Dive into the research topics of 'Sub-1 V, Pico-Watt Subthreshold CMOS Voltage Reference Circuit with Dual Temperature Compensation'. Together they form a unique fingerprint.

Cite this