Study of hole traps in p-type ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopy

I. S. Hauksson; D. Seghier; H. P. Gislason; K. A. Prior; B. C. Cavenett

Study of hole traps in p-type ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopy

I. S. Hauksson, D. Seghier, H. P. Gislason, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We studied nitrogen doped ZnSe and ZnSSe epilayers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. Three major hole traps T1-T3 were observed with energy levels at 0.11, 0.46, and 0.56 eV from the valence band. Similar energy levels were observed in ZnSSe:N except that T1 was at 0.12 eV from the valence band. We attribute T1 to a nitrogen acceptor which controls the p-type conduction in the materials. A crude estimation of the 0.11 eV trap concentration obtained from the data shows correlation with the free carrier concentration due to nitrogen. The two remaining levels may originate from the nitrogen doping process.

Original language	English
Pages (from-to)	1671-1676
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	9993
Publication status	Published - 1997
Event	Defects in semiconductors - Duration: 1 Jan 1997 → …

Keywords

Admittance
DLTS
II-VI
MBE
Nitrogen
p-type
ZnSe
ZnSSe

Cite this

@article{0b089bcfc8e14e79914345738d7f01c3,

title = "Study of hole traps in p-type ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopy",

abstract = "We studied nitrogen doped ZnSe and ZnSSe epilayers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. Three major hole traps T1-T3 were observed with energy levels at 0.11, 0.46, and 0.56 eV from the valence band. Similar energy levels were observed in ZnSSe:N except that T1 was at 0.12 eV from the valence band. We attribute T1 to a nitrogen acceptor which controls the p-type conduction in the materials. A crude estimation of the 0.11 eV trap concentration obtained from the data shows correlation with the free carrier concentration due to nitrogen. The two remaining levels may originate from the nitrogen doping process.",

keywords = "Admittance, DLTS, II-VI, MBE, Nitrogen, p-type, ZnSe, ZnSSe",

author = "Hauksson, {I. S.} and D. Seghier and Gislason, {H. P.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1997",

language = "English",

volume = "258-263",

pages = "1671--1676",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "9993",

note = "Defects in semiconductors, ICDS-19 ; Conference date: 01-01-1997",

}

TY - JOUR

T1 - Study of hole traps in p-type ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopy

AU - Hauksson, I. S.

AU - Seghier, D.

AU - Gislason, H. P.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1997

Y1 - 1997

N2 - We studied nitrogen doped ZnSe and ZnSSe epilayers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. Three major hole traps T1-T3 were observed with energy levels at 0.11, 0.46, and 0.56 eV from the valence band. Similar energy levels were observed in ZnSSe:N except that T1 was at 0.12 eV from the valence band. We attribute T1 to a nitrogen acceptor which controls the p-type conduction in the materials. A crude estimation of the 0.11 eV trap concentration obtained from the data shows correlation with the free carrier concentration due to nitrogen. The two remaining levels may originate from the nitrogen doping process.

AB - We studied nitrogen doped ZnSe and ZnSSe epilayers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. Three major hole traps T1-T3 were observed with energy levels at 0.11, 0.46, and 0.56 eV from the valence band. Similar energy levels were observed in ZnSSe:N except that T1 was at 0.12 eV from the valence band. We attribute T1 to a nitrogen acceptor which controls the p-type conduction in the materials. A crude estimation of the 0.11 eV trap concentration obtained from the data shows correlation with the free carrier concentration due to nitrogen. The two remaining levels may originate from the nitrogen doping process.

KW - Admittance

KW - DLTS

KW - II-VI

KW - MBE

KW - Nitrogen

KW - p-type

KW - ZnSe

KW - ZnSSe

UR - http://www.scopus.com/inward/record.url?scp=0031343475&partnerID=8YFLogxK

M3 - Article

SN - 0255-5476

VL - 258-263

SP - 1671

EP - 1676

JO - Materials Science Forum

JF - Materials Science Forum

IS - 9993

T2 - Defects in semiconductors

Y2 - 1 January 1997

ER -

Study of hole traps in p-type ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopy

Abstract

Keywords

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