Structure of ultrathin silicon dioxide films

Ian W. Boyd, J. I B Wilson

Research output: Contribution to journalArticle

Abstract

Differential infrared spectroscopy has been used to study the silicon-oxygen stretching band of thin silicon dioxide films thermally grown on single-crystal silicon. We consistently observe an asymmetry in the spectra of films thicker than about 100 Å, of about 9 cm-1. The peak position, width, and degree of asymmetry are also found to be sensitively dependent upon film thickness below 100-150 Å, while above this level these features are only very weakly dependent upon film thickness, indicating the presence of a thin layer of different structural or bonding properties. Our interpretation suggests that the infrared spectra of layers up to 100 Å thick are significantly affected by strain originating at the silicon-oxide interface, in agreement with recent observations.

Original languageEnglish
Pages (from-to)320-322
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number6
DOIs
Publication statusPublished - 1987

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