TY - CHAP
T1 - Structure and H Bonding in Device Quality a-Si:H
AU - John, Phillip
AU - Wilson, John Ivor Barrett
PY - 1985
Y1 - 1985
N2 - A brief account is given of the applications of hydrogenated amorphous silicon, a-Si:H, to devices including photovoltaic cells. The role of impurities and defects in modifying device quality is given an historical perspective. Whilst the deliberate incorporation of dopants into the amorphous network promises further advances, the simplistic picture of H reducing free spin density is insufficient. To utilise fully the electronic properties of a-Si:H, a deeper understanding of the structure at the molecular level is required, especially those structures including H in close proximity which are unique to amorphous solids.
AB - A brief account is given of the applications of hydrogenated amorphous silicon, a-Si:H, to devices including photovoltaic cells. The role of impurities and defects in modifying device quality is given an historical perspective. Whilst the deliberate incorporation of dopants into the amorphous network promises further advances, the simplistic picture of H reducing free spin density is insufficient. To utilise fully the electronic properties of a-Si:H, a deeper understanding of the structure at the molecular level is required, especially those structures including H in close proximity which are unique to amorphous solids.
U2 - 10.1007/978-1-4899-5361-2_9
DO - 10.1007/978-1-4899-5361-2_9
M3 - Chapter (peer-reviewed)
SN - 9781489953636
T3 - Institute for Amorphous Studies Series
SP - 107
EP - 115
BT - Tetrahedrally-Bonded Amorphous Semiconductors
PB - Springer
ER -
