Structure and H Bonding in Device Quality a-Si:H

Phillip John, John Ivor Barrett Wilson

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

Abstract

A brief account is given of the applications of hydrogenated amorphous silicon, a-Si:H, to devices including photovoltaic cells. The role of impurities and defects in modifying device quality is given an historical perspective. Whilst the deliberate incorporation of dopants into the amorphous network promises further advances, the simplistic picture of H reducing free spin density is insufficient. To utilise fully the electronic properties of a-Si:H, a deeper understanding of the structure at the molecular level is required, especially those structures including H in close proximity which are unique to amorphous solids.
Original languageEnglish
Title of host publicationTetrahedrally-Bonded Amorphous Semiconductors
PublisherSpringer
Pages107-115
Number of pages9
ISBN (Electronic)9781489953612
ISBN (Print)9781489953636
DOIs
Publication statusPublished - 1985

Publication series

NameInstitute for Amorphous Studies Series

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    John, P., & Wilson, J. I. B. (1985). Structure and H Bonding in Device Quality a-Si:H. In Tetrahedrally-Bonded Amorphous Semiconductors (pp. 107-115). (Institute for Amorphous Studies Series). Springer. https://doi.org/10.1007/978-1-4899-5361-2_9