Structural and electrical characterisation of ion-implanted strained silicon

K. Horan, A. Lankinen, L. O'Reilly, Nick S Bennett, P. J. McNally, B. J. Sealy, Nick E. B. Cowern, T. O. Tuomi

Research output: Contribution to journalArticle

Abstract

The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CIVICS devices [H. Wakabayashi, M. Ueki, M. Narihiro, T. Fukai, N. Ikezawa, T. Matsuda, K. Yoshida, K. Takeuchi. Y. Ochiai, T. Mogami, T. Kunio, Trans. Electron Devices 49 (2002) 89-94]. This architecture will require implants which demonstrate high electrical activation and nm range depth profiles. We investigate the properties of Sb implants in tensile strained silicon due to their potential to satisfy these criteria and the mobility enhancements associated with tensile strained silicon. Low energy (in this case 2 keV) implants coupled with Sb's large atomic radius are capable of providing similar to 10 run implant depths. In addition to this. Sb demonstrates higher electrical activation in the presence of tensile strain, when compared with the more traditional n-type dopant As [N.S. Bennett, N.E.B. Cowern, A.J. Smith, R.M. Gwilliam, B.J.Sealy, LO'Reilly, P.J. McNally. G. Cooke, H. Kheyrandish, Appl. Phys. Lett. 89(2006) 182122]. We now report on the initial results of an ongoing systematic study over a wide silicon tensile strain range (from 0.4% to 1.25% strain) in order to establish clear strain-related trends. Graded Si(1-x)Ge(x) virtual substrates (VS) with 0.1 23% (i.e. epsilon > 0.9%) we find clear evidence of tilt in the SiGe VS, which impacts on the quality of the strained Si. Additionally, stacking faults have been detected non-destructively in the higher strain samples (epsilon = 1.25%. VS = Si(0.7)Ge(0.3)) using SXRT in transmission mode. (C) 2008 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)118-121
Number of pages4
JournalMaterials Science and Engineering: B
Volume154-155
DOIs
Publication statusPublished - 5 Dec 2008
EventSymposium on Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices - Strasbourg, France
Duration: 26 May 200829 May 2008

Keywords

  • Micro-Raman
  • SXRT
  • HR-XRD
  • Tensile strained silicon
  • Stacking faults
  • Misfit dislocations
  • DOPED N-SI
  • RAMAN
  • STRESS

Cite this

Horan, K., Lankinen, A., O'Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., ... Tuomi, T. O. (2008). Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B, 154-155, 118-121. https://doi.org/10.1016/j.mseb.2008.09.007
Horan, K. ; Lankinen, A. ; O'Reilly, L. ; Bennett, Nick S ; McNally, P. J. ; Sealy, B. J. ; Cowern, Nick E. B. ; Tuomi, T. O. / Structural and electrical characterisation of ion-implanted strained silicon. In: Materials Science and Engineering: B. 2008 ; Vol. 154-155. pp. 118-121.
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Horan, K, Lankinen, A, O'Reilly, L, Bennett, NS, McNally, PJ, Sealy, BJ, Cowern, NEB & Tuomi, TO 2008, 'Structural and electrical characterisation of ion-implanted strained silicon', Materials Science and Engineering: B, vol. 154-155, pp. 118-121. https://doi.org/10.1016/j.mseb.2008.09.007

Structural and electrical characterisation of ion-implanted strained silicon. / Horan, K.; Lankinen, A.; O'Reilly, L.; Bennett, Nick S; McNally, P. J.; Sealy, B. J.; Cowern, Nick E. B.; Tuomi, T. O.

In: Materials Science and Engineering: B, Vol. 154-155, 05.12.2008, p. 118-121.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural and electrical characterisation of ion-implanted strained silicon

AU - Horan, K.

AU - Lankinen, A.

AU - O'Reilly, L.

AU - Bennett, Nick S

AU - McNally, P. J.

AU - Sealy, B. J.

AU - Cowern, Nick E. B.

AU - Tuomi, T. O.

PY - 2008/12/5

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N2 - The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CIVICS devices [H. Wakabayashi, M. Ueki, M. Narihiro, T. Fukai, N. Ikezawa, T. Matsuda, K. Yoshida, K. Takeuchi. Y. Ochiai, T. Mogami, T. Kunio, Trans. Electron Devices 49 (2002) 89-94]. This architecture will require implants which demonstrate high electrical activation and nm range depth profiles. We investigate the properties of Sb implants in tensile strained silicon due to their potential to satisfy these criteria and the mobility enhancements associated with tensile strained silicon. Low energy (in this case 2 keV) implants coupled with Sb's large atomic radius are capable of providing similar to 10 run implant depths. In addition to this. Sb demonstrates higher electrical activation in the presence of tensile strain, when compared with the more traditional n-type dopant As [N.S. Bennett, N.E.B. Cowern, A.J. Smith, R.M. Gwilliam, B.J.Sealy, LO'Reilly, P.J. McNally. G. Cooke, H. Kheyrandish, Appl. Phys. Lett. 89(2006) 182122]. We now report on the initial results of an ongoing systematic study over a wide silicon tensile strain range (from 0.4% to 1.25% strain) in order to establish clear strain-related trends. Graded Si(1-x)Ge(x) virtual substrates (VS) with 0.1 23% (i.e. epsilon > 0.9%) we find clear evidence of tilt in the SiGe VS, which impacts on the quality of the strained Si. Additionally, stacking faults have been detected non-destructively in the higher strain samples (epsilon = 1.25%. VS = Si(0.7)Ge(0.3)) using SXRT in transmission mode. (C) 2008 Elsevier B.V. All rights reserved.

AB - The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CIVICS devices [H. Wakabayashi, M. Ueki, M. Narihiro, T. Fukai, N. Ikezawa, T. Matsuda, K. Yoshida, K. Takeuchi. Y. Ochiai, T. Mogami, T. Kunio, Trans. Electron Devices 49 (2002) 89-94]. This architecture will require implants which demonstrate high electrical activation and nm range depth profiles. We investigate the properties of Sb implants in tensile strained silicon due to their potential to satisfy these criteria and the mobility enhancements associated with tensile strained silicon. Low energy (in this case 2 keV) implants coupled with Sb's large atomic radius are capable of providing similar to 10 run implant depths. In addition to this. Sb demonstrates higher electrical activation in the presence of tensile strain, when compared with the more traditional n-type dopant As [N.S. Bennett, N.E.B. Cowern, A.J. Smith, R.M. Gwilliam, B.J.Sealy, LO'Reilly, P.J. McNally. G. Cooke, H. Kheyrandish, Appl. Phys. Lett. 89(2006) 182122]. We now report on the initial results of an ongoing systematic study over a wide silicon tensile strain range (from 0.4% to 1.25% strain) in order to establish clear strain-related trends. Graded Si(1-x)Ge(x) virtual substrates (VS) with 0.1 23% (i.e. epsilon > 0.9%) we find clear evidence of tilt in the SiGe VS, which impacts on the quality of the strained Si. Additionally, stacking faults have been detected non-destructively in the higher strain samples (epsilon = 1.25%. VS = Si(0.7)Ge(0.3)) using SXRT in transmission mode. (C) 2008 Elsevier B.V. All rights reserved.

KW - Micro-Raman

KW - SXRT

KW - HR-XRD

KW - Tensile strained silicon

KW - Stacking faults

KW - Misfit dislocations

KW - DOPED N-SI

KW - RAMAN

KW - STRESS

U2 - 10.1016/j.mseb.2008.09.007

DO - 10.1016/j.mseb.2008.09.007

M3 - Article

VL - 154-155

SP - 118

EP - 121

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

SN - 0921-5107

ER -

Horan K, Lankinen A, O'Reilly L, Bennett NS, McNally PJ, Sealy BJ et al. Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B. 2008 Dec 5;154-155:118-121. https://doi.org/10.1016/j.mseb.2008.09.007