Strain‐Enhanced Activation of Sb Ultrashallow Junctions

N. S. Bennett; L. O'Reilly; A. J. Smith; R. M. Gwilliam; Patrick J. McNally; Nick E. B. Cowern; B. J. Sealy

doi:10.1063/1.2401460

Strain‐Enhanced Activation of Sb Ultrashallow Junctions

N. S. Bennett^*
, L. O'Reilly
, A. J. Smith
, R. M. Gwilliam
, Patrick J. McNally
, Nick E. B. Cowern
, B. J. Sealy

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.

Original language	English
Title of host publication	Ion Implementation Technology
Subtitle of host publication	16TH International Conference on Ion Implementation Technology - IIT 2006
Editors	Karen J. Kirkby, Russell M. Gwilliam, Andy Smith, David Chivers
Publisher	AIP Publishing
Pages	54-57
Number of pages	4
Volume	866
ISBN (Print)	9780735403659
DOIs	https://doi.org/10.1063/1.2401460
Publication status	Published - 13 Nov 2006
Event	16th International Conference on Ion Implantation Technology 2006 - Marseille, France Duration: 11 Jun 2006 → 16 Jun 2006

Publication series

Name	AIP Conference Proceedings
Publisher	AIP Publishing
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	16th International Conference on Ion Implantation Technology 2006
Abbreviated title	IIT 2006
Country/Territory	France
City	Marseille
Period	11/06/06 → 16/06/06

Keywords

Dopant activation
Junction stability
Rapid thermal annealing
Strained-silicon

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2401460

Cite this

Bennett, N. S., O'Reilly, L., Smith, A. J., Gwilliam, R. M., McNally, P. J., Cowern, N. E. B., & Sealy, B. J. (2006). Strain‐Enhanced Activation of Sb Ultrashallow Junctions. In K. J. Kirkby, R. M. Gwilliam, A. Smith, & D. Chivers (Eds.), Ion Implementation Technology: 16TH International Conference on Ion Implementation Technology - IIT 2006 (Vol. 866, pp. 54-57). (AIP Conference Proceedings). AIP Publishing. https://doi.org/10.1063/1.2401460

@inproceedings{9a7132e97bd140f68545685ae82fe84a,

title = "Strain‐Enhanced Activation of Sb Ultrashallow Junctions",

abstract = "Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.",

keywords = "Dopant activation, Junction stability, Rapid thermal annealing, Strained-silicon",

author = "Bennett, \{N. S.\} and L. O'Reilly and Smith, \{A. J.\} and Gwilliam, \{R. M.\} and McNally, \{Patrick J.\} and Cowern, \{Nick E. B.\} and Sealy, \{B. J.\}",

year = "2006",

month = nov,

day = "13",

doi = "10.1063/1.2401460",

language = "English",

isbn = "9780735403659",

volume = "866",

series = "AIP Conference Proceedings",

publisher = "AIP Publishing",

pages = "54--57",

editor = "Kirkby, \{Karen J.\} and Gwilliam, \{Russell M.\} and Andy Smith and David Chivers",

booktitle = "Ion Implementation Technology",

address = "United States",

note = "16th International Conference on Ion Implantation Technology 2006, IIT 2006 ; Conference date: 11-06-2006 Through 16-06-2006",

}

Bennett, NS, O'Reilly, L, Smith, AJ, Gwilliam, RM, McNally, PJ, Cowern, NEB & Sealy, BJ 2006, Strain‐Enhanced Activation of Sb Ultrashallow Junctions. in KJ Kirkby, RM Gwilliam, A Smith & D Chivers (eds), Ion Implementation Technology: 16TH International Conference on Ion Implementation Technology - IIT 2006. vol. 866, AIP Conference Proceedings, AIP Publishing, pp. 54-57, 16th International Conference on Ion Implantation Technology 2006, Marseille, France, 11/06/06. https://doi.org/10.1063/1.2401460

Strain‐Enhanced Activation of Sb Ultrashallow Junctions. / Bennett, N. S.; O'Reilly, L.; Smith, A. J. et al.
Ion Implementation Technology: 16TH International Conference on Ion Implementation Technology - IIT 2006. ed. / Karen J. Kirkby; Russell M. Gwilliam; Andy Smith; David Chivers. Vol. 866 AIP Publishing, 2006. p. 54-57 (AIP Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Strain‐Enhanced Activation of Sb Ultrashallow Junctions

AU - Bennett, N. S.

AU - O'Reilly, L.

AU - Smith, A. J.

AU - Gwilliam, R. M.

AU - McNally, Patrick J.

AU - Cowern, Nick E. B.

AU - Sealy, B. J.

PY - 2006/11/13

Y1 - 2006/11/13

N2 - Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.

AB - Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.

KW - Dopant activation

KW - Junction stability

KW - Rapid thermal annealing

KW - Strained-silicon

UR - https://www.scopus.com/pages/publications/33847005936

U2 - 10.1063/1.2401460

DO - 10.1063/1.2401460

M3 - Conference contribution

AN - SCOPUS:33847005936

SN - 9780735403659

VL - 866

T3 - AIP Conference Proceedings

SP - 54

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BT - Ion Implementation Technology

A2 - Kirkby, Karen J.

A2 - Gwilliam, Russell M.

A2 - Smith, Andy

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PB - AIP Publishing

T2 - 16th International Conference on Ion Implantation Technology 2006

Y2 - 11 June 2006 through 16 June 2006

ER -

Bennett NS, O'Reilly L, Smith AJ, Gwilliam RM, McNally PJ, Cowern NEB et al. Strain‐Enhanced Activation of Sb Ultrashallow Junctions. In Kirkby KJ, Gwilliam RM, Smith A, Chivers D, editors, Ion Implementation Technology: 16TH International Conference on Ion Implementation Technology - IIT 2006. Vol. 866. AIP Publishing. 2006. p. 54-57. (AIP Conference Proceedings). doi: 10.1063/1.2401460

Strain‐Enhanced Activation of Sb Ultrashallow Junctions

Abstract

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Keywords

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