Strain‐Enhanced Activation of Sb Ultrashallow Junctions

N. S. Bennett*, L. O'Reilly, A. J. Smith, R. M. Gwilliam, Patrick J. McNally, Nick E. B. Cowern, B. J. Sealy

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.

Original languageEnglish
Title of host publicationIon Implementation Technology
Subtitle of host publication16TH International Conference on Ion Implementation Technology - IIT 2006
EditorsKaren J. Kirkby, Russell M. Gwilliam, Andy Smith, David Chivers
PublisherAIP Publishing
Number of pages4
ISBN (Print)9780735403659
Publication statusPublished - 13 Nov 2006
Event16th International Conference on Ion Implantation Technology 2006 - Marseille, France
Duration: 11 Jun 200616 Jun 2006

Publication series

NameAIP Conference Proceedings
PublisherAIP Publishing
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference16th International Conference on Ion Implantation Technology 2006
Abbreviated titleIIT 2006


  • Dopant activation
  • Junction stability
  • Rapid thermal annealing
  • Strained-silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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