Strain‐Enhanced Activation of Sb Ultrashallow Junctions

N. S. Bennett, L. O'Reilly, A. J. Smith, R. M. Gwilliam, Patrick J. McNally, Nick E. B. Cowern, B. J. Sealy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.

Original languageEnglish
Title of host publicationIon Implementation Technology
Subtitle of host publication16TH International Conference on Ion Implementation Technology - IIT 2006
EditorsKaren J. Kirkby, Russell M. Gwilliam, Andy Smith, David Chivers
PublisherAIP Publishing
Pages54-57
Number of pages4
Volume866
ISBN (Print)9780735403659
DOIs
Publication statusPublished - 13 Nov 2006
Event16th International Conference on Ion Implantation Technology 2006 - Marseille, France
Duration: 11 Jun 200616 Jun 2006

Publication series

NameAIP Conference Proceedings
PublisherAIP Publishing
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference16th International Conference on Ion Implantation Technology 2006
Abbreviated titleIIT 2006
CountryFrance
CityMarseille
Period11/06/0616/06/06

Keywords

  • Dopant activation
  • Junction stability
  • Rapid thermal annealing
  • Strained-silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Bennett, N. S., O'Reilly, L., Smith, A. J., Gwilliam, R. M., McNally, P. J., Cowern, N. E. B., & Sealy, B. J. (2006). Strain‐Enhanced Activation of Sb Ultrashallow Junctions. In K. J. Kirkby, R. M. Gwilliam, A. Smith, & D. Chivers (Eds.), Ion Implementation Technology: 16TH International Conference on Ion Implementation Technology - IIT 2006 (Vol. 866, pp. 54-57). (AIP Conference Proceedings). AIP Publishing. https://doi.org/10.1063/1.2401460