@inproceedings{9a7132e97bd140f68545685ae82fe84a,
title = "Strain‐Enhanced Activation of Sb Ultrashallow Junctions",
abstract = "Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.",
keywords = "Dopant activation, Junction stability, Rapid thermal annealing, Strained-silicon",
author = "Bennett, {N. S.} and L. O'Reilly and Smith, {A. J.} and Gwilliam, {R. M.} and McNally, {Patrick J.} and Cowern, {Nick E. B.} and Sealy, {B. J.}",
year = "2006",
month = nov,
day = "13",
doi = "10.1063/1.2401460",
language = "English",
isbn = "9780735403659",
volume = "866",
series = "AIP Conference Proceedings",
publisher = "AIP Publishing",
pages = "54--57",
editor = "Kirkby, {Karen J.} and Gwilliam, {Russell M.} and Andy Smith and David Chivers",
booktitle = "Ion Implementation Technology",
address = "United States",
note = "16th International Conference on Ion Implantation Technology 2006, IIT 2006 ; Conference date: 11-06-2006 Through 16-06-2006",
}