Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

INIS

• strains 100%
• engineering 100%
• quantum wells 100%
• germanium silicides 100%
• holes 100%
• molecular beam epitaxy 100%
• lifetime 60%
• energy 40%
• growth 20%
• substrates 20%
• control 20%
• design 20%
• probes 20%
• phonons 20%
• pumps 20%
• spectroscopy 20%
• low temperature 20%
• excited states 20%
• carrier lifetime 20%

Engineering

• Engineering 100%
• Quantum Well 100%
• Low-Temperature 50%
• Experimental Technique 50%
• Picosecond 50%
• Energy Engineering 50%
• Excited State 50%
• Crystalline Quality 50%
• Energy Transition 50%
• Carrier Lifetime 50%
• Optical Phonon 50%

Chemistry

• Molecular Beam Epitaxy 100%
• Optical Phonon 50%
• Excited State 50%