Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

M. Zhao, A. Karim, W. X. Ni, C. R. Pidgeon, P. J. Phillips, D. Carder, B. N. Murdin, T. Fromherz, D. J. Paul

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Abstract

Three strain-symmetrized Si/SiGe multi-quantum well structures, designed for probing the carrier lifetime of intrawell intersubband transitions between heavy hole 1 (HH1) and light hole 1 (LH1) states with transition energies below the optical phonon energy, were grown by molecular beam epitaxy at low temperature on fully relaxed SiGe virtual substrates. The grown structures were characterized by using various experimental techniques, showing a high crystalline quality and very precise growth control. The lifetime of the LH1 excited state was determined directly with pump-probe spectroscopy. The measurements indicated an increase of the lifetime by a factor of ~2 due to the increasingly unconfined LH1 state, which agreed very well with the design. It also showed a very long lifetime of several hundred picoseconds for the holes excited out of the well to transit back to the well through a diagonal process. © 2006 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)403-408
Number of pages6
JournalJournal of Luminescence
Volume121
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - Dec 2006

Keywords

  • Intersubband transition
  • Lifetime
  • Molecular beam epitaxy (MBE)
  • Pump-probe spectroscopy
  • Si/SiGe

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    Zhao, M., Karim, A., Ni, W. X., Pidgeon, C. R., Phillips, P. J., Carder, D., Murdin, B. N., Fromherz, T., & Paul, D. J. (2006). Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering. Journal of Luminescence, 121(2 SPEC. ISS.), 403-408. https://doi.org/10.1016/j.jlumin.2006.08.080