A series of Zn0.85Cd0.15Se/ZnSe quantum wells were grown on (2 1 1)B GaAs substrates. In these samples the piezoelectric effect produces an internal electric field and the quantum confined Stark effect shifts the luminescence to longer wavelengths. When the well width is greater than the critical thickness for strain relief layer relaxation decreases the internal field. Changes in the position of the excitonic peaks determined by photoluminescence show that the critical thickness for these structures is 20 nm.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - May 1999|
|Event||Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes|
Duration: 31 Aug 1998 → 4 Sep 1998