Strain relaxation of ZnCdSe quantum wells grown on (2 1 1)B GaAs measured using the piezoelectric effect

J S Milnes, S. A. Telfer, Christian Morhain, B. Urbaszek, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

A series of Zn0.85Cd0.15Se/ZnSe quantum wells were grown on (2 1 1)B GaAs substrates. In these samples the piezoelectric effect produces an internal electric field and the quantum confined Stark effect shifts the luminescence to longer wavelengths. When the well width is greater than the critical thickness for strain relief layer relaxation decreases the internal field. Changes in the position of the excitonic peaks determined by photoluminescence show that the critical thickness for these structures is 20 nm.

Original languageEnglish
Pages (from-to)510-513
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - May 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 31 Aug 19984 Sep 1998

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