Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2

Santosh Kumar, Artur Kaczmarczyk, Brian D Gerardot

Research output: Contribution to journalArticle

129 Citations (Scopus)
45 Downloads (Pure)

Abstract

Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique optoelectronic properties. Here, we report that strain gradients, either unintentionally induced or generated by substrate patterning, result in spatially and spectrally isolated quantum emitters in mono- and bilayer WSe2. By correlating localized excitons with localized strain variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable ∼170 meV. We probe the fine-structure, magneto-optics, and second-order coherence of a strained emitter. These results raise the prospect of strain-engineering quantum emitter properties and deterministically creating arrays of quantum emitters in two-dimensional semiconductors.
Original languageEnglish
Pages (from-to)7567-7573
Number of pages7
JournalNano Letters
Volume15
Issue number11
Early online date19 Oct 2015
DOIs
Publication statusPublished - Nov 2015

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