Strain characterization of directly bonded germanium-to-silicon substrates

Isabelle Ferain; N. S. Bennett; Patrick McNally; Susan Holl; Cindy Colinge

doi:10.1149/05007.0077ecst

Strain characterization of directly bonded germanium-to-silicon substrates

Isabelle Ferain, N. S. Bennett, Patrick McNally, Susan Holl, Cindy Colinge

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Synchrotron X-Ray Topography (SXRT) has been performed on a germanium-silicon substrate fabricated by direct wafer bonding. SXRT allows for quantification of the stress at the bonded interface. This non-invasive techniques help assess the likelihood of defect nucleation induced by the bonding process. This study shows that the stress at the interface, when bonded at 300°C is an order of magnitude lower than the level required to cause spontaneous nucleation of threading dislocations.

Original language	English
Title of host publication	ECS Transactions
Editors	M. S. Goorsky, C. Colinge, R. Knechtel, H. Baumgart, K. Hobart, H. Moriceau, T. Suga
Pages	77-83
Number of pages	7
Volume	50
Edition	7
DOIs	https://doi.org/10.1149/05007.0077ecst
Publication status	Published - 2013
Event	12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting - Honolulu, HI, United States Duration: 7 Oct 2012 → 12 Oct 2012

Conference

Conference	12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting
Country/Territory	United States
City	Honolulu, HI
Period	7/10/12 → 12/10/12

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/05007.0077ecst

Cite this

@inproceedings{17d659aec3e74bc0a7ce29c91947af06,

title = "Strain characterization of directly bonded germanium-to-silicon substrates",

abstract = "Synchrotron X-Ray Topography (SXRT) has been performed on a germanium-silicon substrate fabricated by direct wafer bonding. SXRT allows for quantification of the stress at the bonded interface. This non-invasive techniques help assess the likelihood of defect nucleation induced by the bonding process. This study shows that the stress at the interface, when bonded at 300°C is an order of magnitude lower than the level required to cause spontaneous nucleation of threading dislocations.",

author = "Isabelle Ferain and Bennett, {N. S.} and Patrick McNally and Susan Holl and Cindy Colinge",

year = "2013",

doi = "10.1149/05007.0077ecst",

language = "English",

isbn = "9781607683551",

volume = "50",

pages = "77--83",

editor = "Goorsky, {M. S. } and Colinge, {C. } and Knechtel, {R. } and Baumgart, {H. } and Hobart, {K. } and Moriceau, {H. } and Suga, {T. }",

booktitle = "ECS Transactions",

edition = "7",

note = "12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

Ferain, I, Bennett, NS, McNally, P, Holl, S & Colinge, C 2013, Strain characterization of directly bonded germanium-to-silicon substrates. in MS Goorsky, C Colinge, R Knechtel, H Baumgart, K Hobart, H Moriceau & T Suga (eds), ECS Transactions. 7 edn, vol. 50, pp. 77-83, 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting, Honolulu, HI, United States, 7/10/12. https://doi.org/10.1149/05007.0077ecst

TY - GEN

T1 - Strain characterization of directly bonded germanium-to-silicon substrates

AU - Ferain, Isabelle

AU - Bennett, N. S.

AU - McNally, Patrick

AU - Holl, Susan

AU - Colinge, Cindy

PY - 2013

Y1 - 2013

N2 - Synchrotron X-Ray Topography (SXRT) has been performed on a germanium-silicon substrate fabricated by direct wafer bonding. SXRT allows for quantification of the stress at the bonded interface. This non-invasive techniques help assess the likelihood of defect nucleation induced by the bonding process. This study shows that the stress at the interface, when bonded at 300°C is an order of magnitude lower than the level required to cause spontaneous nucleation of threading dislocations.

AB - Synchrotron X-Ray Topography (SXRT) has been performed on a germanium-silicon substrate fabricated by direct wafer bonding. SXRT allows for quantification of the stress at the bonded interface. This non-invasive techniques help assess the likelihood of defect nucleation induced by the bonding process. This study shows that the stress at the interface, when bonded at 300°C is an order of magnitude lower than the level required to cause spontaneous nucleation of threading dislocations.

UR - http://www.scopus.com/inward/record.url?scp=84885801212&partnerID=8YFLogxK

U2 - 10.1149/05007.0077ecst

DO - 10.1149/05007.0077ecst

M3 - Conference contribution

AN - SCOPUS:84885801212

SN - 9781607683551

VL - 50

SP - 77

EP - 83

BT - ECS Transactions

A2 - Goorsky, M. S.

A2 - Colinge, C.

A2 - Knechtel, R.

A2 - Baumgart, H.

A2 - Hobart, K.

A2 - Moriceau, H.

A2 - Suga, T.

T2 - 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -

Strain characterization of directly bonded germanium-to-silicon substrates

Abstract

Conference

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