Strain characterization of directly bonded germanium-to-silicon substrates

Isabelle Ferain, N. S. Bennett, Patrick McNally, Susan Holl, Cindy Colinge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Synchrotron X-Ray Topography (SXRT) has been performed on a germanium-silicon substrate fabricated by direct wafer bonding. SXRT allows for quantification of the stress at the bonded interface. This non-invasive techniques help assess the likelihood of defect nucleation induced by the bonding process. This study shows that the stress at the interface, when bonded at 300°C is an order of magnitude lower than the level required to cause spontaneous nucleation of threading dislocations.

Original languageEnglish
Title of host publicationECS Transactions
EditorsM. S. Goorsky, C. Colinge, R. Knechtel, H. Baumgart, K. Hobart, H. Moriceau, T. Suga
Pages77-83
Number of pages7
Volume50
Edition7
DOIs
Publication statusPublished - 2013
Event12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting - Honolulu, HI, United States
Duration: 7 Oct 201212 Oct 2012

Conference

Conference12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting
CountryUnited States
CityHonolulu, HI
Period7/10/1212/10/12

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ferain, I., Bennett, N. S., McNally, P., Holl, S., & Colinge, C. (2013). Strain characterization of directly bonded germanium-to-silicon substrates. In M. S. Goorsky, C. Colinge, R. Knechtel, H. Baumgart, K. Hobart, H. Moriceau, & T. Suga (Eds.), ECS Transactions (7 ed., Vol. 50, pp. 77-83) https://doi.org/10.1149/05007.0077ecst