Stimulated and spontaneous emission in ZnSe lasing structures

I. J. Blewett, N. R. Gallaher, E. C. Smith, S. Y. Wang, I. Galbraith, A. K. Kar, B. S. Wherrett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spontaneous and stimulated emission mechanisms from 10 k to room temperature of MBE grown ZnSe lasing structure were studied including the carrier dynamics and lifetimes. Carrier dynamics are important in determining the wavelengths at which a device will emit at a given temperature. Photon recycling is also discussed which reconcile theoretical and experimental values of carrier lifetimes. By combination of experimental results and many body calculations, the dominant lasing mechanism was determined within ZnSe based devices.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Pages203-204
Number of pages2
Volume8
Publication statusPublished - 1994
EventProceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA
Duration: 8 May 199413 May 1994

Conference

ConferenceProceedings of the 21st International Quantum Electronics Conference (IQEC'94)
CityAnaheim, CA, USA
Period8/05/9413/05/94

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    Blewett, I. J., Gallaher, N. R., Smith, E. C., Wang, S. Y., Galbraith, I., Kar, A. K., & Wherrett, B. S. (1994). Stimulated and spontaneous emission in ZnSe lasing structures. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting (Vol. 8, pp. 203-204)