Abstract
Spontaneous and stimulated emission mechanisms from 10 k to room temperature of MBE grown ZnSe lasing structure were studied including the carrier dynamics and lifetimes. Carrier dynamics are important in determining the wavelengths at which a device will emit at a given temperature. Photon recycling is also discussed which reconcile theoretical and experimental values of carrier lifetimes. By combination of experimental results and many body calculations, the dominant lasing mechanism was determined within ZnSe based devices.
Original language | English |
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Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting |
Pages | 203-204 |
Number of pages | 2 |
Volume | 8 |
Publication status | Published - 1994 |
Event | Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) - Anaheim, CA, USA Duration: 8 May 1994 → 13 May 1994 |
Conference
Conference | Proceedings of the 21st International Quantum Electronics Conference (IQEC'94) |
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City | Anaheim, CA, USA |
Period | 8/05/94 → 13/05/94 |