Stacking of ZnSe/ZnCdSe Multi-Quantum Wells on GaAs (100) by Epitaxial Lift-Off

Nirosh Meckamalil Eldose, J. Zhu, N. Mavridi, Kevin Prior, Richard T. Moug

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Abstract

Here we present stacking of GaAs/ZnSe/ZnCdSe single-quantum well (QW) structures using epitaxial lift-off (ELO). Molecular beam epitaxy (MBE)-grown II–VI QW structure was lifted using our standard ELO technique. The QW structures were transferred onto glass plates and then subsequent layers stacked on top of each other to form a triple-QW structure. This was compared to an MBE-grown multiple-QW (MQW) structure of similar design. Low-temperature (77 K) photoluminescence (PL) spectroscopy was used to compare the two structures and showed no obvious degradation of the ELO stacked layer. It was observed that by stacking the single QW layer on itself we could increase the PL emission intensity beyond that of the grown MQW structure while maintaining narrow line width.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalJournal of Electronic Materials
Early online date4 May 2018
DOIs
Publication statusE-pub ahead of print - 4 May 2018

Keywords

  • ELO
  • II–VI
  • MBE
  • MQW
  • PL
  • Stacking

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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