Spot size dependence of switching power for an optically bistable InSb element

D. J. Hagan, H. A. MacKenzie, J. J E Reid, A. C. Walker, F. A P Tooley

Research output: Contribution to journalArticle

Abstract

The dependence of switching power upon input beam spot radius for an optically bistable InSb étalon has been measured. The results show that the irradiance required for switching increases as the spot radius is reduced. There is no evidence of any lower limit to the switching power, even for spot radii much less than the ambipolar diffusion length. Studies of the transmitted beam intensity profile in the near-field demonstrate the role of diffusion in our observations. The implications of our results for digital optical processing are briefly discussed.

Original languageEnglish
Pages (from-to)203-205
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number3
DOIs
Publication statusPublished - 1985

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    Hagan, D. J., MacKenzie, H. A., Reid, J. J. E., Walker, A. C., & Tooley, F. A. P. (1985). Spot size dependence of switching power for an optically bistable InSb element. Applied Physics Letters, 47(3), 203-205. https://doi.org/10.1063/1.96217