Spot size dependence of switching power for an optically bistable InSb element

D. J. Hagan; H. A. MacKenzie; J. J E Reid; A. C. Walker; F. A P Tooley

doi:10.1063/1.96217

Spot size dependence of switching power for an optically bistable InSb element

D. J. Hagan, H. A. MacKenzie, J. J E Reid, A. C. Walker, F. A P Tooley

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The dependence of switching power upon input beam spot radius for an optically bistable InSb étalon has been measured. The results show that the irradiance required for switching increases as the spot radius is reduced. There is no evidence of any lower limit to the switching power, even for spot radii much less than the ambipolar diffusion length. Studies of the transmitted beam intensity profile in the near-field demonstrate the role of diffusion in our observations. The implications of our results for digital optical processing are briefly discussed.

Original language	English
Pages (from-to)	203-205
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	3
DOIs	https://doi.org/10.1063/1.96217
Publication status	Published - 1985

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10.1063/1.96217

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abstract = "The dependence of switching power upon input beam spot radius for an optically bistable InSb {\'e}talon has been measured. The results show that the irradiance required for switching increases as the spot radius is reduced. There is no evidence of any lower limit to the switching power, even for spot radii much less than the ambipolar diffusion length. Studies of the transmitted beam intensity profile in the near-field demonstrate the role of diffusion in our observations. The implications of our results for digital optical processing are briefly discussed.",

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AU - Hagan, D. J.

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AU - Reid, J. J E

AU - Walker, A. C.

AU - Tooley, F. A P

PY - 1985

Y1 - 1985

N2 - The dependence of switching power upon input beam spot radius for an optically bistable InSb étalon has been measured. The results show that the irradiance required for switching increases as the spot radius is reduced. There is no evidence of any lower limit to the switching power, even for spot radii much less than the ambipolar diffusion length. Studies of the transmitted beam intensity profile in the near-field demonstrate the role of diffusion in our observations. The implications of our results for digital optical processing are briefly discussed.

AB - The dependence of switching power upon input beam spot radius for an optically bistable InSb étalon has been measured. The results show that the irradiance required for switching increases as the spot radius is reduced. There is no evidence of any lower limit to the switching power, even for spot radii much less than the ambipolar diffusion length. Studies of the transmitted beam intensity profile in the near-field demonstrate the role of diffusion in our observations. The implications of our results for digital optical processing are briefly discussed.

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DO - 10.1063/1.96217

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Spot size dependence of switching power for an optically bistable InSb element

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