Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers

C. R. Pidgeon; P. Murzyn; P. J. Phillips; B. N. Murdin; K. Litvinenko; M. Merrick; L. F. Cohen; T. Zhang; S. K. Clowes; P. Buckle; T. Ashley

Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers

C. R. Pidgeon, P. Murzyn, P. J. Phillips, B. N. Murdin, K. Litvinenko, M. Merrick, L. F. Cohen, T. Zhang, S. K. Clowes, P. Buckle, T. Ashley

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report time-resolved measurement of spin lifetimes in both bulk and quantum well narrow gap semiconductors (NGSs) at 300K. We have used both free electron and solid state laser sources from 3 to 7 µm and quarter wave plates to produce circularly polarised pump and probe beams. We previously demonstrated that spin flip (Elliott-Yafet, EY) scattering dominates in Hg _0.78Cd_0.22Te due to strong lattice scattering. In contrast, spin unphasing (D'Yakonov-Perel, DP) scattering controls the loss of polarisation in intrinsic InSb and InAs due to the higher mobility, giving spin lifetimes, t_s, of ~20ps at 300K. We report first measurements of t_s of - 17ps in InSb/InAlSb quantum wells. © 2004 IEEE.

Original language	English
Title of host publication	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics
Pages	207-208
Number of pages	2
Publication status	Published - 2004
Event	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics - Karlsruhe, Germany Duration: 27 Sept 2004 → 1 Oct 2004

Conference

Conference	Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics
Country/Territory	Germany
City	Karlsruhe
Period	27/09/04 → 1/10/04

Cite this

Pidgeon, C. R., Murzyn, P., Phillips, P. J., Murdin, B. N., Litvinenko, K., Merrick, M., Cohen, L. F., Zhang, T., Clowes, S. K., Buckle, P., & Ashley, T. (2004). Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers. In Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics (pp. 207-208)

@inproceedings{6a9d598f6517453e987f707aad7e55ca,

title = "Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers",

abstract = "We report time-resolved measurement of spin lifetimes in both bulk and quantum well narrow gap semiconductors (NGSs) at 300K. We have used both free electron and solid state laser sources from 3 to 7 µm and quarter wave plates to produce circularly polarised pump and probe beams. We previously demonstrated that spin flip (Elliott-Yafet, EY) scattering dominates in Hg 0.78Cd0.22Te due to strong lattice scattering. In contrast, spin unphasing (D'Yakonov-Perel, DP) scattering controls the loss of polarisation in intrinsic InSb and InAs due to the higher mobility, giving spin lifetimes, ts, of ~20ps at 300K. We report first measurements of ts of - 17ps in InSb/InAlSb quantum wells. {\textcopyright} 2004 IEEE.",

author = "Pidgeon, {C. R.} and P. Murzyn and Phillips, {P. J.} and Murdin, {B. N.} and K. Litvinenko and M. Merrick and Cohen, {L. F.} and T. Zhang and Clowes, {S. K.} and P. Buckle and T. Ashley",

year = "2004",

language = "English",

isbn = "0780384903",

pages = "207--208",

booktitle = "Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics",

note = "Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics ; Conference date: 27-09-2004 Through 01-10-2004",

}

Pidgeon, CR, Murzyn, P, Phillips, PJ, Murdin, BN, Litvinenko, K, Merrick, M, Cohen, LF, Zhang, T, Clowes, SK, Buckle, P & Ashley, T 2004, Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers. in Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. pp. 207-208, Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karlsruhe, Germany, 27/09/04.

Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers. / Pidgeon, C. R.; Murzyn, P.; Phillips, P. J. et al.
Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. 2004. p. 207-208.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Phillips, P. J.

AU - Murdin, B. N.

AU - Litvinenko, K.

AU - Merrick, M.

AU - Cohen, L. F.

AU - Zhang, T.

AU - Clowes, S. K.

AU - Buckle, P.

AU - Ashley, T.

PY - 2004

Y1 - 2004

N2 - We report time-resolved measurement of spin lifetimes in both bulk and quantum well narrow gap semiconductors (NGSs) at 300K. We have used both free electron and solid state laser sources from 3 to 7 µm and quarter wave plates to produce circularly polarised pump and probe beams. We previously demonstrated that spin flip (Elliott-Yafet, EY) scattering dominates in Hg 0.78Cd0.22Te due to strong lattice scattering. In contrast, spin unphasing (D'Yakonov-Perel, DP) scattering controls the loss of polarisation in intrinsic InSb and InAs due to the higher mobility, giving spin lifetimes, ts, of ~20ps at 300K. We report first measurements of ts of - 17ps in InSb/InAlSb quantum wells. © 2004 IEEE.

AB - We report time-resolved measurement of spin lifetimes in both bulk and quantum well narrow gap semiconductors (NGSs) at 300K. We have used both free electron and solid state laser sources from 3 to 7 µm and quarter wave plates to produce circularly polarised pump and probe beams. We previously demonstrated that spin flip (Elliott-Yafet, EY) scattering dominates in Hg 0.78Cd0.22Te due to strong lattice scattering. In contrast, spin unphasing (D'Yakonov-Perel, DP) scattering controls the loss of polarisation in intrinsic InSb and InAs due to the higher mobility, giving spin lifetimes, ts, of ~20ps at 300K. We report first measurements of ts of - 17ps in InSb/InAlSb quantum wells. © 2004 IEEE.

M3 - Conference contribution

SN - 0780384903

SP - 207

EP - 208

BT - Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics

T2 - Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics

Y2 - 27 September 2004 through 1 October 2004

ER -

Spin relaxation in InSb and InAs by 1- And 2-colour spectroscopy with free electron and solid state lasers

Abstract

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