Spin relaxation by transient monopolar and bipolar optical orientation

B. N. Murdin, K. Litvinenko, D. G. Clarke, C. R. Pidgeon, P. Murzyn, P. J. Phillips, D. Carder, G. Berden, B. Redlich, A. F G Van Der Meer, S. Clowes, J. J. Harris, L. F. Cohen, T. Ashley, L. Buckle

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Abstract

We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps. © 2006 The American Physical Society.

Original languageEnglish
Article number096603
Pages (from-to)1-4
Number of pages4
JournalPhysical Review Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2006

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    Murdin, B. N., Litvinenko, K., Clarke, D. G., Pidgeon, C. R., Murzyn, P., Phillips, P. J., Carder, D., Berden, G., Redlich, B., Van Der Meer, A. F. G., Clowes, S., Harris, J. J., Cohen, L. F., Ashley, T., & Buckle, L. (2006). Spin relaxation by transient monopolar and bipolar optical orientation. Physical Review Letters, 96(9), 1-4. [096603]. https://doi.org/10.1103/PhysRevLett.96.096603