Spin preservation during THz orbital pumping of shallow donors in silicon

K. Saeedi, N. Stavriasi, B. Redlich, A. F. G. van der Meer, R. Mikhaylovskiy, A. V. Kimel, C. R. Pidgeon, B. N. Murdin

Research output: Contribution to journalArticle

Abstract

We investigate the spin relaxation under conditions of optical excitation between the Rydberg orbital states of phosphorus donor impurities in silicon. Here we show that the spin relaxation is less than a few percent, even after multiple excitation/relaxation cycles. The observed high level of spin preservation may be useful for readout cycling or in quantum information schemes where coupling of neighbor qubits is via orbital excitation.
Original languageEnglish
Article number435401
JournalJournal of Physics: Condensed Matter
Volume31
Issue number43
Early online date26 Jul 2019
DOIs
Publication statusPublished - 30 Oct 2019

Keywords

  • D0X spin readout
  • THz orbital pumping
  • electron spin of donors in silicon
  • free electron laser FELIX
  • optical cycling
  • qubit gate scheme
  • spin preservation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Saeedi, K., Stavriasi, N., Redlich, B., van der Meer, A. F. G., Mikhaylovskiy, R., Kimel, A. V., Pidgeon, C. R., & Murdin, B. N. (2019). Spin preservation during THz orbital pumping of shallow donors in silicon. Journal of Physics: Condensed Matter, 31(43), [435401]. https://doi.org/10.1088/1361-648X/ab31d2