Abstract
We investigate the spin relaxation under conditions of optical excitation between the Rydberg orbital states of phosphorus donor impurities in silicon. Here we show that the spin relaxation is less than a few percent, even after multiple excitation/relaxation cycles. The observed high level of spin preservation may be useful for readout cycling or in quantum information schemes where coupling of neighbor qubits is via orbital excitation.
Original language | English |
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Article number | 435401 |
Journal | Journal of Physics: Condensed Matter |
Volume | 31 |
Issue number | 43 |
Early online date | 26 Jul 2019 |
DOIs | |
Publication status | Published - 30 Oct 2019 |
Keywords
- D0X spin readout
- THz orbital pumping
- electron spin of donors in silicon
- free electron laser FELIX
- optical cycling
- qubit gate scheme
- spin preservation
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics