Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers

B. N. Murdin, M. Merrick, K. Litvinenko, P. Murzyn, P. J. Phillips, C. R. Pidgeon, T. Zhang, S. K. Clowes, L. F. Cohen, P. Buckle, T. Ashley

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The tunable, high-power, pulsed radiation from a free electron laser or an amplified Ti:sapphire based solid-state laser is extremely useful for the investigation of spin-related phenomena in semiconductors. The tunability is important for resonant excitation of transitions, the high power enables non-linear or weak processes to be studied and the short pulses allow time resolution of the dynamics. We report two related studies where the excitation is with circularly polarized light, and is therefore spin-selective.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
Subtitle of host publicationState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium; San Antonio, TX; United States; 9 May 2004 through 14 May 2004
Number of pages6
Publication statusPublished - 2004
Event205th Meeting of the Electrochemical Society - San Antonio, TX, United States
Duration: 9 May 200414 May 2004


Conference205th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CitySan Antonio, TX


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