Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers

B. N. Murdin; M. Merrick; K. Litvinenko; P. Murzyn; P. J. Phillips; C. R. Pidgeon; T. Zhang; S. K. Clowes; L. F. Cohen; P. Buckle; T. Ashley

Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers

B. N. Murdin, M. Merrick, K. Litvinenko, P. Murzyn, P. J. Phillips, C. R. Pidgeon, T. Zhang, S. K. Clowes, L. F. Cohen, P. Buckle, T. Ashley

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The tunable, high-power, pulsed radiation from a free electron laser or an amplified Ti:sapphire based solid-state laser is extremely useful for the investigation of spin-related phenomena in semiconductors. The tunability is important for resonant excitation of transitions, the high power enables non-linear or weak processes to be studied and the short pulses allow time resolution of the dynamics. We report two related studies where the excitation is with circularly polarized light, and is therefore spin-selective.

Original language	English
Title of host publication	Proceedings - Electrochemical Society
Subtitle of host publication	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium; San Antonio, TX; United States; 9 May 2004 through 14 May 2004
Pages	253-258
Number of pages	6
Volume	2
Publication status	Published - 2004
Event	205th Meeting of the Electrochemical Society - San Antonio, TX, United States Duration: 9 May 2004 → 14 May 2004

Conference

Conference	205th Meeting of the Electrochemical Society
Country/Territory	United States
City	San Antonio, TX
Period	9/05/04 → 14/05/04

Cite this

Murdin, B. N., Merrick, M., Litvinenko, K., Murzyn, P., Phillips, P. J., Pidgeon, C. R., Zhang, T., Clowes, S. K., Cohen, L. F., Buckle, P., & Ashley, T. (2004). Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers. In Proceedings - Electrochemical Society: State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium; San Antonio, TX; United States; 9 May 2004 through 14 May 2004 (Vol. 2, pp. 253-258)

Murdin, B. N. ; Merrick, M. ; Litvinenko, K. et al. / Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers. Proceedings - Electrochemical Society: State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium; San Antonio, TX; United States; 9 May 2004 through 14 May 2004. Vol. 2 2004. pp. 253-258

@inproceedings{1e6008ce328746eda862648949ecd2c3,

title = "Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers",

abstract = "The tunable, high-power, pulsed radiation from a free electron laser or an amplified Ti:sapphire based solid-state laser is extremely useful for the investigation of spin-related phenomena in semiconductors. The tunability is important for resonant excitation of transitions, the high power enables non-linear or weak processes to be studied and the short pulses allow time resolution of the dynamics. We report two related studies where the excitation is with circularly polarized light, and is therefore spin-selective.",

author = "Murdin, {B. N.} and M. Merrick and K. Litvinenko and P. Murzyn and Phillips, {P. J.} and Pidgeon, {C. R.} and T. Zhang and Clowes, {S. K.} and Cohen, {L. F.} and P. Buckle and T. Ashley",

year = "2004",

language = "English",

volume = "2",

pages = "253--258",

booktitle = "Proceedings - Electrochemical Society",

note = "205th Meeting of the Electrochemical Society ; Conference date: 09-05-2004 Through 14-05-2004",

}

Murdin, BN, Merrick, M, Litvinenko, K, Murzyn, P, Phillips, PJ, Pidgeon, CR, Zhang, T, Clowes, SK, Cohen, LF, Buckle, P & Ashley, T 2004, Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers. in Proceedings - Electrochemical Society: State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium; San Antonio, TX; United States; 9 May 2004 through 14 May 2004. vol. 2, pp. 253-258, 205th Meeting of the Electrochemical Society, San Antonio, TX, United States, 9/05/04.

Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers. / Murdin, B. N.; Merrick, M.; Litvinenko, K. et al.
Proceedings - Electrochemical Society: State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium; San Antonio, TX; United States; 9 May 2004 through 14 May 2004. Vol. 2 2004. p. 253-258.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers

AU - Murdin, B. N.

AU - Merrick, M.

AU - Litvinenko, K.

AU - Murzyn, P.

AU - Phillips, P. J.

AU - Pidgeon, C. R.

AU - Zhang, T.

AU - Clowes, S. K.

AU - Cohen, L. F.

AU - Buckle, P.

AU - Ashley, T.

PY - 2004

Y1 - 2004

N2 - The tunable, high-power, pulsed radiation from a free electron laser or an amplified Ti:sapphire based solid-state laser is extremely useful for the investigation of spin-related phenomena in semiconductors. The tunability is important for resonant excitation of transitions, the high power enables non-linear or weak processes to be studied and the short pulses allow time resolution of the dynamics. We report two related studies where the excitation is with circularly polarized light, and is therefore spin-selective.

AB - The tunable, high-power, pulsed radiation from a free electron laser or an amplified Ti:sapphire based solid-state laser is extremely useful for the investigation of spin-related phenomena in semiconductors. The tunability is important for resonant excitation of transitions, the high power enables non-linear or weak processes to be studied and the short pulses allow time resolution of the dynamics. We report two related studies where the excitation is with circularly polarized light, and is therefore spin-selective.

UR - http://www.scopus.com/inward/record.url?scp=5744247714&partnerID=8YFLogxK

M3 - Conference contribution

VL - 2

SP - 253

EP - 258

BT - Proceedings - Electrochemical Society

T2 - 205th Meeting of the Electrochemical Society

Y2 - 9 May 2004 through 14 May 2004

ER -

Murdin BN, Merrick M, Litvinenko K, Murzyn P, Phillips PJ, Pidgeon CR et al. Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers. In Proceedings - Electrochemical Society: State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium; San Antonio, TX; United States; 9 May 2004 through 14 May 2004. Vol. 2. 2004. p. 253-258

Spin lifetimes in narrow GAP semiconductors measured with free-electron and solid-state lasers

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